DMN55D0UTQ-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Package / Case :

SOT-523

JESD-609 Code :

e3

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Number of Terminations :

3

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

160mA Ta

Drain Current-Max (Abs) (ID) :

0.16A

Vgs (Max) :

±12V

Drain-source On Resistance-Max :

4Ohm

Mounting Type :

Surface Mount

Reference Standard :

AEC-Q101

Drain to Source Voltage (Vdss) :

50V

Continuous Drain Current (ID) :

160mA

DS Breakdown Voltage-Min :

50V

Terminal Finish :

Matte Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4V

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

17 Weeks

Vgs(th) (Max) @ Id :

1V @ 250μA

Additional Feature :

High Reliability

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

200mW Ta

Rds On (Max) @ Id, Vgs :

4 Ω @ 100mA, 4V

Input Capacitance (Ciss) (Max) @ Vds :

25pF @ 10V

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Published :

2015

JESD-30 Code :

R-PDSO-G3

Number of Elements :

1

Mount :

Surface Mount