DMN55D0UT-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Weight :

7.994566mg

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

FET Type :

N-Channel

ECCN Code :

EAR99

Number of Elements :

1

Additional Feature :

High Reliability

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

12V

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Continuous Drain Current (ID) :

160mA

Number of Channels :

1

Published :

2012

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 250μA

Power Dissipation :

200mW

Package / Case :

SOT-523

Terminal Position :

Dual

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

25pF @ 10V

Lead Free :

Lead Free

Power Dissipation-Max :

200mW Ta

Pbfree Code :

yes

Width :

800μm

Vgs (Max) :

±12V

Radiation Hardening :

No

Pin Count :

3

Drain-source On Resistance-Max :

4Ohm

Current - Continuous Drain (Id) @ 25°C :

160mA Ta

Threshold Voltage :

800mV

Operating Temperature :

-55°C~150°C TJ

Height :

750μm

Drain to Source Breakdown Voltage :

50V

JESD-609 Code :

e3

Factory Lead Time :

18 Weeks

Length :

1.6mm

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4V

Rds On (Max) @ Id, Vgs :

4 Ω @ 100mA, 4V

Time@Peak Reflow Temperature-Max (s) :

40