DMN55D0UT-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

160mA

Published :

2012

Threshold Voltage :

800mV

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

1V @ 250μA

Drain to Source Breakdown Voltage :

50V

Pin Count :

3

Mount :

Surface Mount

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

4 Ω @ 100mA, 4V

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Drain-source On Resistance-Max :

4Ohm

Length :

1.6mm

Height :

750μm

Number of Channels :

1

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

200mW Ta

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Vgs (Max) :

±12V

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

25pF @ 10V

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Number of Terminations :

3

Element Configuration :

Single

Number of Pins :

3

Weight :

7.994566mg

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

160mA Ta

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Factory Lead Time :

18 Weeks

Width :

800μm

Package / Case :

SOT-523

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

12V

Power Dissipation :

200mW

Additional Feature :

High Reliability

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4V