DDTC123ECAQ-7-F

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Factory Lead Time :

19 Weeks

Reference Standard :

AEC-Q101

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1, HIGH RELIABILITY

Resistor - Base (R1) :

2.2 kOhms

Polarity/Channel Type :

NPN

Product Status :

Active

Current - Collector Cutoff (Max) :

500nA

Package / Case :

TO-236-3, SC-59, SOT-23-3

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 20mA, 5V

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Brand :

Diodes Incorporated

ECCN Code :

EAR99

Number of Terminals :

3

DC Current Gain-Min (hFE) :

20

Package :

Tape and Reel (TR)

Surface Mount :

yes

Collector-Emitter Voltage-Max :

50 V

Number of Elements :

1

Power Dissipation-Max (Abs) :

0.2 W

RoHS :

Details

JESD-30 Code :

R-PDSO-G3

Power - Max :

200 mW

Packaging :

MouseReel

Reach Compliance Code :

Compliant

Voltage - Collector Emitter Breakdown (Max) :

50 V

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Package Shape :

RECTANGULAR

Product Type :

BJTs - Bipolar Transistors - Pre-Biased

Transistor Type :

NPN - Pre-Biased

Current - Collector (Ic) (Max) :

100 mA

Supplier Device Package :

SOT-23-3

Product Category :

Bipolar Transistors - Pre-Biased

Frequency - Transition :

250 MHz

Terminal Finish :

Matte Tin (Sn)

Collector Current-Max (IC) :

0.1 A

Terminal Position :

Dual

Series :

Automotive, AEC-Q101

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Resistor - Emitter Base (R2) :

2.2 kOhms