DDTC113TE-7-F

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max) :

100mA

HTS Code :

8541.21.00.75

Transistor Element Material :

SILICON

Power - Max :

150mW

JESD-30 Code :

R-PDSO-G3

Number of Elements :

1

Voltage - Collector Emitter Breakdown (Max) :

50V

Terminal Finish :

Matte Tin (Sn)

Frequency - Transition :

250MHz

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Terminal Form :

Gull wing

Terminal Position :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Transition Frequency :

250MHz

Polarity/Channel Type :

NPN

ECCN Code :

EAR99

Factory Lead Time :

19 Weeks

Packaging :

Tape and Reel (TR)

Published :

2007

Transistor Type :

NPN - Pre-Biased

Resistor - Base (R1) :

1 k Ω

JESD-609 Code :

e3

Base Part Number :

DDTC113

Current - Collector Cutoff (Max) :

500nA ICBO

Pin Count :

3

Mounting Type :

Surface Mount

Number of Terminations :

3

Vce Saturation (Max) @ Ib, Ic :

300mV @ 1mA, 10mA

Operating Temperature (Max) :

150°C

Power Dissipation-Max (Abs) :

0.15W

Peak Reflow Temperature (Cel) :

260

Package / Case :

SOT-523

Additional Feature :

BUILT-IN BIAS RESISTOR

Pbfree Code :

yes