DDTC115GUA-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Number of Elements :

1

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Additional Feature :

BUILT IN BIAS RESISTOR

Width :

1.35mm

Max Operating Temperature :

150°C

Number of Terminations :

3

hFE Min :

82

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

50V

Min Operating Temperature :

-55°C

Terminal Finish :

Matte Tin (Sn)

Factory Lead Time :

5 Weeks

Resistor - Emitter Base (R2) :

100 k Ω

Element Configuration :

Single

Weight :

6.010099mg

Max Power Dissipation :

200mW

Packaging :

Tape and Reel (TR)

Current Rating :

100mA

Height :

1mm

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Max Breakdown Voltage :

50V

Continuous Collector Current :

100mA

JESD-609 Code :

e3

Frequency - Transition :

250MHz

Voltage - Rated DC :

50V

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Voltage (VCEO) :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Terminal Position :

Dual

Length :

2.2mm

Pin Count :

3

Polarity :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

82 @ 5mA 5V

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

500nA ICBO

HTS Code :

8541.21.00.75

Max Collector Current :

100mA

Transition Frequency :

250MHz

Qualification Status :

Not Qualified

Mount :

Surface Mount

Published :

2007

Package / Case :

SC-70, SOT-323

Transistor Type :

NPN - Pre-Biased