DDTC114YCAQ-7-F

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA, 5V

Voltage - Collector Emitter Breakdown (Max) :

50 V

Current - Collector (Ic) (Max) :

100 mA

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Product Status :

Active

Product Type :

BJTs - Bipolar Transistors - Pre-Biased

Power - Max :

200 mW

Current - Collector Cutoff (Max) :

500nA

JESD-30 Code :

R-PDSO-G3

Package :

Tape and Reel (TR)

Series :

DDTC (R1≠R2 SERIES) CA

Additional Feature :

BUILT-IN BIAS RESISTANCE RATIO IS 4.7, HIGH RELIABILITY

Brand :

Diodes Incorporated

Configuration :

SINGLE WITH BUILT-IN RESISTOR

DC Current Gain-Min (hFE) :

80

Package / Case :

TO-236-3, SC-59, SOT-23-3

Polarity/Channel Type :

NPN

Supplier Device Package :

SOT-23-3

Pbfree Code :

yes

Surface Mount :

yes

Package Shape :

RECTANGULAR

Power Dissipation-Max (Abs) :

0.2 W

Packaging :

MouseReel

RoHS :

Details

Frequency - Transition :

250 MHz

Number of Elements :

1

Product Category :

Bipolar Transistors - Pre-Biased

Mounting Type :

Surface Mount

Reference Standard :

AEC-Q101

Terminal Form :

Gull wing

Number of Terminals :

3

Terminal Position :

Dual

Reach Compliance Code :

Compliant

Transistor Type :

NPN - Pre-Biased

Peak Reflow Temperature (Cel) :

260

Collector-Emitter Voltage-Max :

50 V

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Resistor - Base (R1) :

10 kOhms

Collector Current-Max (IC) :

0.07 A

Transistor Element Material :

SILICON

Resistor - Emitter Base (R2) :

47 kOhms