DDTC114EE-7-F

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Weight :

2.012816mg

Pbfree Code :

yes

Max Collector Current :

100mA

Max Breakdown Voltage :

50V

Max Operating Temperature :

150°C

Collector Emitter Breakdown Voltage :

50V

Number of Elements :

1

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Transition Frequency :

250MHz

Mount :

Surface Mount

Max Power Dissipation :

150mW

Continuous Collector Current :

100mA

Terminal Form :

Gull wing

Transistor Type :

NPN - Pre-Biased

Factory Lead Time :

19 Weeks

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Voltage (VCEO) :

300mV

Mounting Type :

Surface Mount

Current - Collector Cutoff (Max) :

500nA

Resistor - Base (R1) :

10 k Ω

Polarity :

NPN

Frequency - Transition :

250MHz

Qualification Status :

Not Qualified

Voltage - Rated DC :

50V

Published :

2006

Min Operating Temperature :

-55°C

Resistor - Emitter Base (R2) :

10 k Ω

Peak Reflow Temperature (Cel) :

260

Package / Case :

SOT-523

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Width :

800μm

hFE Min :

30

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Element Configuration :

Single

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Length :

1.6mm

Current Rating :

50mA

HTS Code :

8541.21.00.75

Number of Terminations :

3

Pin Count :

3

Terminal Finish :

Matte Tin (Sn)

Packaging :

Tape and Reel (TR)

Height :

750μm

Number of Pins :

3