DDTC114EE-7-F

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Resistor - Emitter Base (R2) :

10 k Ω

Collector Emitter Breakdown Voltage :

50V

Max Power Dissipation :

150mW

Factory Lead Time :

19 Weeks

Collector Emitter Voltage (VCEO) :

300mV

Number of Terminations :

3

Resistor - Base (R1) :

10 k Ω

Transition Frequency :

250MHz

hFE Min :

30

Mount :

Surface Mount

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Current - Collector Cutoff (Max) :

500nA

Number of Elements :

1

Lead Free :

Lead Free

Max Breakdown Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Pin Count :

3

HTS Code :

8541.21.00.75

Continuous Collector Current :

100mA

Time@Peak Reflow Temperature-Max (s) :

40

Max Operating Temperature :

150°C

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Published :

2006

Number of Pins :

3

Max Collector Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Pbfree Code :

yes

Terminal Position :

Dual

Terminal Finish :

Matte Tin (Sn)

Polarity :

NPN

Height :

750μm

JESD-609 Code :

e3

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Frequency - Transition :

250MHz

Min Operating Temperature :

-55°C

Length :

1.6mm

Width :

800μm

ECCN Code :

EAR99

Transistor Type :

NPN - Pre-Biased

Peak Reflow Temperature (Cel) :

260

Package / Case :

SOT-523

Packaging :

Tape and Reel (TR)

Weight :

2.012816mg

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Current Rating :

50mA

Voltage - Rated DC :

50V