DDTB113EU-7-F

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Published :

2007

Number of Elements :

1

Resistor - Base (R1) :

1 k Ω

Terminal Finish :

Matte Tin (Sn)

HTS Code :

8541.21.00.75

Transition Frequency :

200MHz

Time@Peak Reflow Temperature-Max (s) :

40

Length :

2.2mm

Height :

1mm

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

50V

hFE Min :

33

Polarity :

PNP

Resistor - Emitter Base (R2) :

1 k Ω

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

200mW

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Width :

1.35mm

Factory Lead Time :

19 Weeks

Frequency - Transition :

200MHz

Current - Collector Cutoff (Max) :

500nA

Max Breakdown Voltage :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

33 @ 50mA 5V

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Element Configuration :

Single

Mount :

Surface Mount

Number of Terminations :

3

Max Collector Current :

500mA

Qualification Status :

Not Qualified

Continuous Collector Current :

500mA

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Pbfree Code :

yes

Number of Pins :

3

Transistor Type :

PNP - Pre-Biased

Base Part Number :

DTB113

Package / Case :

SC-70, SOT-323

Weight :

6.010099mg

Max Operating Temperature :

150°C

Min Operating Temperature :

-55°C

Collector Emitter Voltage (VCEO) :

300mV

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA