DDTB113EU-7-F

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

33 @ 50mA 5V

Number of Elements :

1

JESD-609 Code :

e3

Polarity :

PNP

Transition Frequency :

200MHz

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

500nA

Pbfree Code :

yes

Published :

2007

Base Part Number :

DTB113

Weight :

6.010099mg

Terminal Finish :

Matte Tin (Sn)

Pin Count :

3

Collector Emitter Breakdown Voltage :

50V

Peak Reflow Temperature (Cel) :

260

Continuous Collector Current :

500mA

Width :

1.35mm

Max Operating Temperature :

150°C

Frequency - Transition :

200MHz

Element Configuration :

Single

Max Power Dissipation :

200mW

HTS Code :

8541.21.00.75

Collector Emitter Voltage (VCEO) :

300mV

Package / Case :

SC-70, SOT-323

Min Operating Temperature :

-55°C

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Height :

1mm

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Resistor - Emitter Base (R2) :

1 k Ω

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Length :

2.2mm

Packaging :

Tape and Reel (TR)

Transistor Type :

PNP - Pre-Biased

hFE Min :

33

Terminal Position :

Dual

Terminal Form :

Gull wing

Max Collector Current :

500mA

Number of Terminations :

3

Resistor - Base (R1) :

1 k Ω

Max Breakdown Voltage :

50V

Factory Lead Time :

19 Weeks

Number of Pins :

3

Mount :

Surface Mount

Mounting Type :

Surface Mount