DDTB113EU-7-F

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Max Breakdown Voltage :

50V

Max Power Dissipation :

200mW

Mounting Type :

Surface Mount

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Finish :

Matte Tin (Sn)

Base Part Number :

DTB113

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Element Configuration :

Single

Package / Case :

SC-70, SOT-323

Length :

2.2mm

Weight :

6.010099mg

Transistor Type :

PNP - Pre-Biased

HTS Code :

8541.21.00.75

Number of Terminations :

3

Pbfree Code :

yes

Continuous Collector Current :

500mA

Current - Collector Cutoff (Max) :

500nA

Frequency - Transition :

200MHz

ECCN Code :

EAR99

Min Operating Temperature :

-55°C

Factory Lead Time :

19 Weeks

Polarity :

PNP

Number of Pins :

3

Qualification Status :

Not Qualified

Collector Emitter Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

300mV

Terminal Position :

Dual

Resistor - Emitter Base (R2) :

1 k Ω

Resistor - Base (R1) :

1 k Ω

Published :

2007

RoHS Status :

ROHS3 Compliant

Max Operating Temperature :

150°C

Pin Count :

3

Max Collector Current :

500mA

Number of Elements :

1

JESD-609 Code :

e3

Width :

1.35mm

hFE Min :

33

Mount :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Height :

1mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

33 @ 50mA 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Transition Frequency :

200MHz