DDTB113EC-7-F

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Number of Pins :

3

Max Operating Temperature :

150°C

Terminal Finish :

Matte Tin (Sn)

Resistor - Emitter Base (R2) :

1 k Ω

Collector Emitter Voltage (VCEO) :

300mV

Min Operating Temperature :

-55°C

Max Power Dissipation :

200mW

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Polarity :

PNP

Number of Terminations :

3

Continuous Collector Current :

500mA

Max Collector Current :

500mA

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Pbfree Code :

yes

Package / Case :

TO-236-3, SC-59, SOT-23-3

Element Configuration :

Single

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Resistor - Base (R1) :

1 k Ω

Factory Lead Time :

19 Weeks

Packaging :

Tape and Reel (TR)

Frequency - Transition :

200MHz

Transistor Type :

PNP - Pre-Biased

Length :

3.05mm

Mounting Type :

Surface Mount

Width :

1.4mm

Reach Compliance Code :

not_compliant

HTS Code :

8541.21.00.75

Collector Emitter Breakdown Voltage :

50V

Terminal Form :

Gull wing

Current - Collector Cutoff (Max) :

500nA

Terminal Position :

Dual

ECCN Code :

EAR99

Transition Frequency :

200MHz

Mount :

Surface Mount

Max Breakdown Voltage :

50V

JESD-609 Code :

e3

Published :

2008

Weight :

7.994566mg

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Base Part Number :

DTB113

Height :

1mm

hFE Min :

33

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

DC Current Gain (hFE) (Min) @ Ic, Vce :

33 @ 50mA 5V