DDTB113EC-7-F

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

HTS Code :

8541.21.00.75

Pbfree Code :

yes

Polarity :

PNP

Frequency - Transition :

200MHz

Number of Pins :

3

Max Power Dissipation :

200mW

Length :

3.05mm

Peak Reflow Temperature (Cel) :

260

Min Operating Temperature :

-55°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Type :

PNP - Pre-Biased

Max Operating Temperature :

150°C

Qualification Status :

Not Qualified

Base Part Number :

DTB113

Resistor - Emitter Base (R2) :

1 k Ω

Width :

1.4mm

Weight :

7.994566mg

Package / Case :

TO-236-3, SC-59, SOT-23-3

Reach Compliance Code :

not_compliant

Max Collector Current :

500mA

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

300mV

Mount :

Surface Mount

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Element Configuration :

Single

Continuous Collector Current :

500mA

Current - Collector Cutoff (Max) :

500nA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Resistor - Base (R1) :

1 k Ω

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn)

Factory Lead Time :

19 Weeks

Max Breakdown Voltage :

50V

Pin Count :

3

ECCN Code :

EAR99

Transition Frequency :

200MHz

Collector Emitter Breakdown Voltage :

50V

Terminal Position :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

33 @ 50mA 5V

Published :

2008

RoHS Status :

ROHS3 Compliant

hFE Min :

33

JESD-609 Code :

e3

Height :

1mm