DDTB113EC-7-F

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Terminal Position :

Dual

Mounting Type :

Surface Mount

Number of Terminations :

3

Current - Collector Cutoff (Max) :

500nA

Polarity :

PNP

Min Operating Temperature :

-55°C

DC Current Gain (hFE) (Min) @ Ic, Vce :

33 @ 50mA 5V

Frequency - Transition :

200MHz

Max Breakdown Voltage :

50V

Resistor - Base (R1) :

1 k Ω

Mount :

Surface Mount

Max Power Dissipation :

200mW

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Factory Lead Time :

19 Weeks

Package / Case :

TO-236-3, SC-59, SOT-23-3

Qualification Status :

Not Qualified

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Max Collector Current :

500mA

Time@Peak Reflow Temperature-Max (s) :

40

HTS Code :

8541.21.00.75

Transition Frequency :

200MHz

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

300mV

Max Operating Temperature :

150°C

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Reach Compliance Code :

not_compliant

Continuous Collector Current :

500mA

Weight :

7.994566mg

Transistor Type :

PNP - Pre-Biased

Width :

1.4mm

Height :

1mm

Pbfree Code :

yes

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Published :

2008

Length :

3.05mm

Base Part Number :

DTB113

hFE Min :

33

Resistor - Emitter Base (R2) :

1 k Ω

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

50V

Terminal Form :

Gull wing

Number of Pins :

3