DDTB113EC-7-F

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

HTS Code :

8541.21.00.75

DC Current Gain (hFE) (Min) @ Ic, Vce :

33 @ 50mA 5V

Length :

3.05mm

Continuous Collector Current :

500mA

Transistor Type :

PNP - Pre-Biased

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Height :

1mm

Max Power Dissipation :

200mW

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Qualification Status :

Not Qualified

Terminal Finish :

Matte Tin (Sn)

Collector Emitter Breakdown Voltage :

50V

Resistor - Base (R1) :

1 k Ω

ECCN Code :

EAR99

Element Configuration :

Single

Max Collector Current :

500mA

Pbfree Code :

yes

Width :

1.4mm

Resistor - Emitter Base (R2) :

1 k Ω

Current - Collector Cutoff (Max) :

500nA

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

40

Factory Lead Time :

19 Weeks

Transition Frequency :

200MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Number of Terminations :

3

Mount :

Surface Mount

Number of Pins :

3

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Published :

2008

Terminal Form :

Gull wing

Reach Compliance Code :

not_compliant

hFE Min :

33

Polarity :

PNP

JESD-609 Code :

e3

Weight :

7.994566mg

Collector Emitter Voltage (VCEO) :

300mV

Frequency - Transition :

200MHz

Base Part Number :

DTB113

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Operating Temperature :

150°C

Packaging :

Tape and Reel (TR)

Min Operating Temperature :

-55°C

Max Breakdown Voltage :

50V

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260