DDA114EH-7
- Mfr.Part #
- DDA114EH-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- TRANS 2PNP PREBIAS 0.15W SOT563
- Stock
- 19,534
- In Stock :
- 19,534
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Flat
- Terminal Finish :
- Matte Tin (Sn)
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 50V
- Transition Frequency :
- 250MHz
- Pin Count :
- 6
- Pbfree Code :
- yes
- Number of Pins :
- 6
- Packaging :
- Tape and Reel (TR)
- Length :
- 1.6mm
- Package / Case :
- SOT-563, SOT-666
- Published :
- 2007
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500μA, 10mA
- RoHS Status :
- ROHS3 Compliant
- Height :
- 600μm
- Max Collector Current :
- 100mA
- Continuous Collector Current :
- 100mA
- Mounting Type :
- Surface Mount
- Min Operating Temperature :
- -55°C
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Voltage (VCEO) :
- 300mV
- Base Part Number :
- DDA114
- Width :
- 1.2mm
- Element Configuration :
- Dual
- Radiation Hardening :
- No
- Number of Elements :
- 2
- Peak Reflow Temperature (Cel) :
- 260
- Frequency - Transition :
- 250MHz
- Weight :
- 3.005049mg
- Max Operating Temperature :
- 150°C
- Additional Feature :
- BUILT-IN BIAS RESISTOR RATIO 1
- Resistor - Emitter Base (R2) :
- 10k Ω
- Time@Peak Reflow Temperature-Max (s) :
- 40
- HTS Code :
- 8541.21.00.75
- Number of Terminations :
- 6
- hFE Min :
- 30
- Transistor Type :
- 2 PNP - Pre-Biased (Dual)
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 50V
- Resistor - Base (R1) :
- 10k Ω
- Max Power Dissipation :
- 150mW
- Polarity :
- PNP
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 5mA 5V
- Datasheets
- DDA114EH-7

DDA114EH-7 datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from Diodes Incorporated stock available at
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