DDA113TU-7-F

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

300mV @ 1mA, 10mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

HTS Code :

8541.21.00.75

Additional Feature :

BUILT IN BIAS RESISTOR

Published :

2007

Length :

2.2mm

Collector Emitter Breakdown Voltage :

50V

Polarity :

PNP

Continuous Collector Current :

100mA

REACH SVHC :

No SVHC

Element Configuration :

Dual

JESD-609 Code :

e3

Number of Terminations :

6

Width :

1.35mm

Terminal Finish :

Matte Tin (Sn)

Pin Count :

6

Frequency - Transition :

250MHz

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Mount :

Surface Mount

Resistor - Base (R1) :

1k Ω

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

6-TSSOP, SC-88, SOT-363

Radiation Hardening :

No

Transistor Type :

2 PNP - Pre-Biased (Dual)

Max Power Dissipation :

200mW

Height :

1mm

Min Operating Temperature :

-55°C

Transition Frequency :

250MHz

Max Collector Current :

100mA

Max Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

50V

Pbfree Code :

yes

Factory Lead Time :

17 Weeks

Terminal Form :

Gull wing

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Max Operating Temperature :

150°C

Mounting Type :

Surface Mount

Weight :

6.010099mg

Number of Pins :

6