DDA114EU-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Pin Count :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2006

Package / Case :

SOT-363

Transistor Element Material :

SILICON

Reach Compliance Code :

not_compliant

Polarity :

PNP

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Collector Emitter Breakdown Voltage :

50V

Terminal Finish :

Tin/Lead (Sn85Pb15)

Mount :

Surface Mount

Number of Terminations :

6

Number of Elements :

2

Voltage - Rated DC :

-50V

Max Breakdown Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

10

Element Configuration :

Dual

Max Power Dissipation :

200mW

ECCN Code :

EAR99

Lead Free :

Contains Lead

Terminal Form :

Gull wing

Max Collector Current :

100mA

Packaging :

Tape and Reel (TR)

Current Rating :

-100mA

Collector Emitter Voltage (VCEO) :

300mV

HTS Code :

8541.21.00.75

Emitter Base Voltage (VEBO) :

-5V

JESD-609 Code :

e0

Power Dissipation :

200mW

Number of Pins :

6

Transition Frequency :

250MHz

Qualification Status :

Not Qualified

DC Current Gain-Min (hFE) :

30

hFE Min :

100

Peak Reflow Temperature (Cel) :

235

RoHS Status :

ROHS3 Compliant

Continuous Collector Current :

-100mA