CYDD18S36V18-200BBXC
- Mfr.Part #
- CYDD18S36V18-200BBXC
- Manufacturer
- Infineon Technologies
- Package / Case
- 256-LBGA
- Datasheet
- Download
- Description
- IC SRAM 18MBIT PARALLEL 256FBGA
- Stock
- 48,255
- In Stock :
- 48,255
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Memory
- Length :
- 19mm
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Lead Free :
- Lead Free
- Pin Count :
- 256
- Number of Pins :
- 256
- Voltage - Supply :
- 1.42V~1.58V 1.7V~1.9V
- Supply Current-Max :
- 0.98mA
- Terminal Position :
- BOTTOM
- Clock Frequency :
- 200MHz
- Memory Interface :
- Parallel
- Memory Type :
- Volatile
- Standby Voltage-Min :
- 1.5V
- Surface Mount :
- yes
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Output Characteristics :
- 3-STATE
- Memory Width :
- 72
- I/O Type :
- COMMON
- Base Part Number :
- CYDD
- Number of Functions :
- 1
- Density :
- 18 Mb
- Access Time :
- 500ps
- Supply Voltage-Max (Vsup) :
- 1.58V
- Time@Peak Reflow Temperature-Max (s) :
- 20
- Number of Ports :
- 2
- Packaging :
- Tray
- Memory Size :
- 18Mb 256K x 36 x 2
- Mounting Type :
- Surface Mount
- Standby Current-Max :
- 0.3A
- Peak Reflow Temperature (Cel) :
- 260
- Supply Voltage :
- 1.5V
- Address Bus Width :
- 18b
- Number of Terminations :
- 256
- JESD-609 Code :
- e1
- Additional Feature :
- PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATE AT 1.8V
- Published :
- 2006
- Operating Supply Voltage :
- 1.8V
- Pbfree Code :
- yes
- Operating Temperature :
- 0°C~70°C TA
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Memory Format :
- SRAM
- Height Seated (Max) :
- 1.7mm
- Terminal Pitch :
- 1mm
- Package / Case :
- 256-LBGA
- Datasheets
- CYDD18S36V18-200BBXC

Memory Infineon Technologies CYDD18S36V18-200BBXC Overview
Introducing the Memory Infineon Technologies CYDD18S36V18-200BBXC, a high-performance 18Mbit SRAM component from Infineon Technologies, designed for applications demanding high-speed data access and reliability. This IC leverages advanced circuit design and leading-edge technology, encapsulated in a 256FBGA package, offering robust parallel interface options for seamless integration. This product is ideal for enterprises seeking scalable solutions in high-speed computing environments, ensuring both efficiency and longevity in system performance.
CYDD18S36V18-200BBXC Features
This SRAM unit boasts several key features that make it a standout choice for integrating into advanced electronic systems. Its 18Mbit storage capacity allows for substantial data handling capabilities, while the parallel interface facilitates faster data transfer rates, essential for real-time processing applications. The compact 256FBGA packaging not only ensures a reduced footprint but also enhances thermal stability and improves overall durability.
CYDD18S36V18-200BBXC Applications
- Networking Equipment: Utilized in routers and switches for buffer and caching functions, enhancing data flow and reducing latency.
- Telecommunications: Plays a critical role in telecom infrastructures by storing firmware and other critical data for fast access, improving service reliability and speed.
- Industrial Automation: Supports complex industrial control systems by providing quick access to data, essential for real-time decision making and process control.
- Medical Devices: Used in medical imaging systems to handle large datasets effectively, ensuring rapid processing and response times essential in medical diagnostics.
- High-performance Computing: Ideal for applications requiring quick data retrieval to support intensive computational tasks in scientific and financial modeling.
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