CYDD09S36V18-200BBXC

Manufacturer :

Infineon Technologies

Product Category :

Memory

Factory Lead Time :

12 Weeks

Packaging :

Tray

Clock Frequency :

200MHz

Memory Size :

9Mb 128K x 36 x 2

Radiation Hardening :

No

Access Time :

500ps

Moisture Sensitivity Level (MSL) :

5 (48 Hours)

Additional Feature :

PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATE AT 1.8V

Output Characteristics :

3-STATE

Nominal Supply Current :

790mA

Height Seated (Max) :

1.7mm

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Operating Temperature :

0°C~70°C TA

Base Part Number :

CYDD

Published :

2006

Memory Type :

Volatile

JESD-609 Code :

e1

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Memory Format :

SRAM

Lead Free :

Lead Free

Terminal Pitch :

1mm

Peak Reflow Temperature (Cel) :

260

Word Size :

36b

Number of Ports :

2

Supply Voltage :

1.5V

Standby Voltage-Min :

1.5V

Length :

17mm

Pbfree Code :

yes

Number of Terminations :

256

Terminal Position :

BOTTOM

Operating Supply Voltage :

1.8V

Density :

9 Mb

I/O Type :

COMMON

Number of Pins :

256

Sync/Async :

SYNCHRONOUS

Package / Case :

256-LBGA

Supply Voltage-Max (Vsup) :

1.58V

Time@Peak Reflow Temperature-Max (s) :

30

Address Bus Width :

34b

Memory Interface :

Parallel

Memory Width :

72

Voltage - Supply :

1.42V~1.58V 1.7V~1.9V

Number of Functions :

1

Pin Count :

256

Mount :

Surface Mount