CYDD09S36V18-200BBXC

Manufacturer :

Infineon Technologies

Product Category :

Memory

Sync/Async :

SYNCHRONOUS

Memory Format :

SRAM

Supply Voltage-Max (Vsup) :

1.58V

Package / Case :

256-LBGA

Mounting Type :

Surface Mount

Output Characteristics :

3-STATE

Access Time :

500ps

Terminal Pitch :

1mm

Nominal Supply Current :

790mA

Memory Width :

72

JESD-609 Code :

e1

Density :

9 Mb

Word Size :

36b

Length :

17mm

Operating Temperature :

0°C~70°C TA

Moisture Sensitivity Level (MSL) :

5 (48 Hours)

Operating Supply Voltage :

1.8V

Memory Size :

9Mb 128K x 36 x 2

Packaging :

Tray

Address Bus Width :

34b

Mount :

Surface Mount

Terminal Position :

BOTTOM

Radiation Hardening :

No

Memory Interface :

Parallel

Additional Feature :

PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATE AT 1.8V

Clock Frequency :

200MHz

Number of Pins :

256

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Factory Lead Time :

12 Weeks

I/O Type :

COMMON

Number of Functions :

1

RoHS Status :

ROHS3 Compliant

Published :

2006

Pin Count :

256

Number of Terminations :

256

Voltage - Supply :

1.42V~1.58V 1.7V~1.9V

Lead Free :

Lead Free

Memory Type :

Volatile

Base Part Number :

CYDD

Standby Voltage-Min :

1.5V

Height Seated (Max) :

1.7mm

Number of Ports :

2

Supply Voltage :

1.5V