CYD36S18V18-200BGXC

Manufacturer :

Infineon Technologies

Product Category :

Memory

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Access Time :

3.3ns

Terminal Position :

BOTTOM

Pin Count :

484

Clock Frequency :

200MHz

Published :

2011

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Time@Peak Reflow Temperature-Max (s) :

20

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Memory Type :

Volatile

JESD-609 Code :

e1

Number of Ports :

2

Mount :

Surface Mount

Radiation Hardening :

No

Voltage - Supply :

1.42V~1.58V 1.7V~1.9V

Density :

36 Mb

Number of Terminations :

484

Nominal Supply Current :

1.43A

Base Part Number :

CYD36S18

Number of Functions :

1

Memory Interface :

Parallel

Sync/Async :

SYNCHRONOUS

I/O Type :

COMMON

Memory Format :

SRAM

Operating Supply Voltage :

1.8V

Operating Temperature :

0°C~70°C TA

RoHS Status :

ROHS3 Compliant

Standby Current-Max :

0.59A

Package / Case :

484-FBGA

Memory Size :

36Mb 2M x 18

Standby Voltage-Min :

1.4V

Mounting Type :

Surface Mount

Supply Voltage :

1.5V

Memory Width :

18

Output Characteristics :

3-STATE

Address Bus Width :

21b

Supply Voltage-Max (Vsup) :

1.58V

Number of Pins :

484

Packaging :

Tray

Additional Feature :

PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V

Terminal Pitch :

1mm

Word Size :

18b