CSD75207W15
- Mfr.Part #
- CSD75207W15
- Manufacturer
- Texas Instruments
- Package / Case
- 9-UFBGA, DSBGA
- Datasheet
- Download
- Description
- MOSFET 2P-CH 3.9A 9DSBGA
- Stock
- 4,789
- In Stock :
- 4,789
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 162m Ω @ 1A, 1.8V
- Length :
- 1.75mm
- Terminal Form :
- Ball
- Gate Charge (Qg) (Max) @ Vgs :
- 3.7nC @ 4.5V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Input Capacitance (Ciss) (Max) @ Vds :
- 595pF @ 10V
- Number of Pins :
- 9
- Rise Time :
- 8.6ns
- Factory Lead Time :
- 12 Weeks
- Height :
- 625μm
- Series :
- NexFET™
- Width :
- 1.75mm
- Turn-Off Delay Time :
- 32.1 ns
- Pbfree Code :
- yes
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vgs(th) (Max) @ Id :
- 1.1V @ 250μA
- FET Type :
- 2 P-Channel (Dual) Common Source
- Gate to Source Voltage (Vgs) :
- -6V
- Max Power Dissipation :
- 700mW
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 16 ns
- JESD-609 Code :
- e1
- Base Part Number :
- CSD75207
- Contact Plating :
- Copper, Silver, Tin
- FET Feature :
- Logic Level Gate
- Turn On Delay Time :
- 12.8 ns
- Terminal Position :
- BOTTOM
- Mount :
- Surface Mount
- Operating Mode :
- -0.8
- Package / Case :
- 9-UFBGA, DSBGA
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 3.9A
- Datasheets
- CSD75207W15

CSD75207W15 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available at
CSD75207W15 Description
C S D75207W15 devices want to provide the lowest on-resistance and gate charge in the smallest configuration and have good thermal characteristics at ultra-low voltage. Low resistance, small footprint and low profile make the device Ideal choice for limited battery-powered space. Apply. The device also obtained US patents of 7952145 , 7420247 , 7235845 and 6600182.
CSD75207W15 Features
Dual P-Channel MOSFETs
Common Source Configuration
Small Footprint1.5-mmx1.5-mm
Gate-Source Voltage Clamp
Gate ESD Protection>4 kV
-HBM JEDEC standard JESD22-A114
Pb and Halogen Free
·RoHS Compliant
CSD75207W15 Applications
Battery Management Battery Protection
Load and Input Switching
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