CSD75208W1015T

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

68m Ω @ 1A, 4.5V

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Channels :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

-20V

FET Type :

2 P-Channel (Dual) Common Source

Number of Pins :

6

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

-6V

Factory Lead Time :

6 Weeks

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation :

750mW

Turn On Delay Time :

9 ns

JESD-609 Code :

e1

Input Capacitance (Ciss) (Max) @ Vds :

410pF @ 10V

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Threshold Voltage :

-800mV

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

BOTTOM

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 4.5V

Weight :

1.700971mg

Thickness :

2mm

Pbfree Code :

yes

Rise Time :

5ns

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Series :

NexFET™

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Package / Case :

6-UFBGA, DSBGA

Width :

1.8mm

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Length :

1.5mm

Element Configuration :

Dual

Transistor Element Material :

SILICON

Turn-Off Delay Time :

29 ns

Drain to Source Voltage (Vdss) :

20V

Number of Terminations :

6

Base Part Number :

CSD75207

Fall Time (Typ) :

11 ns

Mount :

Surface Mount

Height :

1mm

Transistor Application :

SWITCHING

Number of Elements :

2

FET Feature :

Logic Level Gate

Terminal Form :

Ball

Drain-source On Resistance-Max :

0.15Ohm

Feedback Cap-Max (Crss) :

10 pF

Continuous Drain Current (ID) :

1.6A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)