CSD75211W1723

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Position :

BOTTOM

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

12-UFBGA, DSBGA

Max Power Dissipation :

1.5W

Drain to Source Voltage (Vdss) :

20V

Terminal Form :

Ball

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Base Part Number :

CSD75211

Element Configuration :

Dual

FET Feature :

Logic Level Gate

Transistor Application :

SWITCHING

Mount :

Surface Mount

Lead Free :

Contains Lead

FET Type :

2 P-Channel (Dual)

JESD-609 Code :

e1

Number of Terminations :

12

Turn On Delay Time :

3.7 ns

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

40m Ω @ 2A, 4.5V

Series :

NexFET™

Rise Time :

4.1ns

Gate to Source Voltage (Vgs) :

8V

Power Dissipation :

1.5W

Drain to Source Breakdown Voltage :

20V

Radiation Hardening :

No

Number of Pins :

12

Pbfree Code :

No

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 10V

Fall Time (Typ) :

1.6 ns

REACH SVHC :

No SVHC

Pin Count :

12

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

9.1 ns

Nominal Vgs :

-700 mV

Drain-source On Resistance-Max :

0.07Ohm

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Continuous Drain Current (ID) :

4.5A

Threshold Voltage :

-700mV

Number of Elements :

2

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

5.9nC @ 4.5V