CSD75211W1723

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Element Configuration :

Dual

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

20V

Rds On (Max) @ Id, Vgs :

40m Ω @ 2A, 4.5V

Pin Count :

12

Package / Case :

12-UFBGA, DSBGA

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

FET Feature :

Logic Level Gate

Drain to Source Voltage (Vdss) :

20V

Mount :

Surface Mount

Max Power Dissipation :

1.5W

FET Type :

2 P-Channel (Dual)

Continuous Drain Current (ID) :

4.5A

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 10V

Transistor Element Material :

SILICON

Turn On Delay Time :

3.7 ns

Threshold Voltage :

-700mV

Terminal Position :

BOTTOM

Lead Free :

Contains Lead

Terminal Form :

Ball

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

No

Operating Temperature :

-55°C~150°C TJ

Series :

NexFET™

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

5.9nC @ 4.5V

Mounting Type :

Surface Mount

Power Dissipation :

1.5W

Nominal Vgs :

-700 mV

Fall Time (Typ) :

1.6 ns

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

8V

Base Part Number :

CSD75211

Number of Pins :

12

Rise Time :

4.1ns

Drain-source On Resistance-Max :

0.07Ohm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

12

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Turn-Off Delay Time :

9.1 ns

JESD-609 Code :

e1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)