CSD75301W1015

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Terminal Form :

Ball

Fall Time (Typ) :

16 ns

Max Power Dissipation :

800mW

Number of Terminations :

6

Gate Charge (Qg) (Max) @ Vgs :

2.1nC @ 4.5V

Terminal Position :

BOTTOM

Power Dissipation :

800mW

Turn On Delay Time :

3 ns

Series :

NexFET™

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

195pF @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

CSD75301

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

20V

Vgs(th) (Max) @ Id :

1V @ 250μA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

20V

Turn-Off Delay Time :

38 ns

Gate to Source Voltage (Vgs) :

8V

Feedback Cap-Max (Crss) :

31 pF

Rise Time :

1.7ns

Package / Case :

6-UFBGA, DSBGA

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

1.2A

Radiation Hardening :

No

FET Feature :

Logic Level Gate

Rds On (Max) @ Id, Vgs :

100m Ω @ 1A, 4.5V

Number of Pins :

6

Threshold Voltage :

-700mV

Drain-source On Resistance-Max :

0.19Ohm

Transistor Application :

SWITCHING

Pin Count :

6

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Elements :

2

FET Type :

2 P-Channel (Dual)

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Lead Free :

Lead Free

Nominal Vgs :

-700 mV

JESD-609 Code :

e1

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260