CP101-BSS52-CT
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- Mfr.Part #
- CP101-BSS52-CT
- Manufacturer
- Central Semiconductor
- Package / Case
- Die
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 1A DIE
- Stock
- 29,460
- In Stock ：
- 29,460
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 500mA, 10V
- Mounting Type :
- Surface Mount
- Power - Max :
- 800 mW
- Transistor Type :
- NPN - Darlington
- Package / Case :
- Die
- Current - Collector (Ic) (Max) :
- 1 A
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 4mA, 1A
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Series :
- -
- Product Status :
- Obsolete
- Frequency - Transition :
- -
- Package :
- Bulk
- Supplier Device Package :
- Die
- Datasheets
- CP101-BSS52-CT
NPN - Darlington -65°C ~ 200°C (TJ) 50nA (ICBO) Die Surface Mount
CP101-BSS52-CT Overview
In this device, the DC current gain is 2000 @ 500mA, 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.6V @ 4mA, 1A.Supplier device package Die comes with the product.The device exhibits a collector-emitter breakdown at 80 V.
CP101-BSS52-CT Features
the DC current gain for this device is 2000 @ 500mA, 10V
the vce saturation(Max) is 1.6V @ 4mA, 1A
the supplier device package of Die
CP101-BSS52-CT Applications
There are a lot of Central
CP101-BSS52-CT applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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