BUP213

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Vce(on) (Max) @ Vge, Ic :

3.2V @ 15V, 15A

Number of Pins :

3

Td (on/off) @ 25°C :

70ns/400ns

Element Configuration :

Single

Gate-Emitter Thr Voltage-Max :

6.5V

JEDEC-95 Code :

TO-220AB

Gate-Emitter Voltage-Max :

20V

Polarity/Channel Type :

N-Channel

Power - Max :

200W

JESD-609 Code :

e3

Input Type :

Standard

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Collector Emitter Voltage (VCEO) :

1.2kV

Mount :

Through Hole

Max Collector Current :

32A

Terminal Finish :

MATTE TIN

Additional Feature :

High Speed

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Collector Emitter Breakdown (Max) :

1200V

Turn On Time :

70 ns

Transistor Element Material :

SILICON

Rise Time :

70ns

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Current - Collector Pulsed (Icm) :

64A

Turn Off Time-Nom (toff) :

400 ns

Published :

2002

Number of Terminations :

3

RoHS Status :

Non-RoHS Compliant

Max Power Dissipation :

200W

Collector Emitter Breakdown Voltage :

1.2kV

Packaging :

Tube

Package / Case :

TO-220-3

Number of Elements :

1

Fall Time-Max (tf) :

95ns

Operating Temperature :

-55°C~150°C TJ

Test Condition :

600V, 15A, 82 Ω, 15V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

Motor Control

Mounting Type :

Through Hole