BULT3P3
- Mfr.Part #
- BULT3P3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 200V 3A SOT32-3
- Stock
- 42,180
- In Stock :
- 42,180
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tube
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100μA
- Collector Emitter Breakdown Voltage :
- 200V
- Element Configuration :
- Single
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- Transistor Type :
- PNP
- Reach Compliance Code :
- not_compliant
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 1A
- Number of Terminations :
- 3
- Max Collector Current :
- 3A
- Package / Case :
- TO-225AA, TO-126-3
- Collector Emitter Voltage (VCEO) :
- 200V
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- BULT3
- Mount :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 10mA 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 32W
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 32W
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Finish :
- Matte Tin (Sn)
- Datasheets
- BULT3P3

PNP 150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
BULT3P3 Overview
In this device, the DC current gain is 10 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 200mA, 1A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Maximum collector currents can be below 3A volts.
BULT3P3 Features
the DC current gain for this device is 10 @ 10mA 5V
the vce saturation(Max) is 500mV @ 200mA, 1A
the emitter base voltage is kept at 6V
BULT3P3 Applications
There are a lot of STMicroelectronics
BULT3P3 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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