BULT3P3

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Mfr.Part #
BULT3P3
Manufacturer
STMicroelectronics
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 200V 3A SOT32-3
Stock
42,180
In Stock :
42,180

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Packaging :
Tube
Transistor Application :
SWITCHING
Pbfree Code :
yes
Mounting Type :
Through Hole
Number of Pins :
3
Current - Collector Cutoff (Max) :
100μA
Collector Emitter Breakdown Voltage :
200V
Element Configuration :
Single
Number of Elements :
1
Qualification Status :
Not Qualified
ECCN Code :
EAR99
Transistor Type :
PNP
Reach Compliance Code :
not_compliant
Vce Saturation (Max) @ Ib, Ic :
500mV @ 200mA, 1A
Number of Terminations :
3
Max Collector Current :
3A
Package / Case :
TO-225AA, TO-126-3
Collector Emitter Voltage (VCEO) :
200V
Pin Count :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Polarity/Channel Type :
PNP
Operating Temperature :
150°C TJ
Base Part Number :
BULT3
Mount :
Through Hole
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce :
10 @ 10mA 5V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power - Max :
32W
JESD-609 Code :
e3
Max Power Dissipation :
32W
Transistor Element Material :
SILICON
Emitter Base Voltage (VEBO) :
6V
Terminal Finish :
Matte Tin (Sn)
Datasheets
BULT3P3
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BULT3P3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, Package / Case:TO-225AA, TO-126-3, Operating Temperature:150°C TJ, Base Part Number:BULT3, BULT3P3 pinout, BULT3P3 datasheet PDF, BULT3P3 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BULT3P3 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BULT3P3


PNP 150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole

BULT3P3 Overview


In this device, the DC current gain is 10 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 200mA, 1A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Maximum collector currents can be below 3A volts.

BULT3P3 Features


the DC current gain for this device is 10 @ 10mA 5V
the vce saturation(Max) is 500mV @ 200mA, 1A
the emitter base voltage is kept at 6V


BULT3P3 Applications


There are a lot of STMicroelectronics
BULT3P3 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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