BULT3P3

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Mfr.Part #
BULT3P3
Manufacturer
STMicroelectronics
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 200V 3A SOT32-3
Stock
42,180
In Stock :
42,180

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Number of Elements :
1
Current - Collector Cutoff (Max) :
100μA
Operating Temperature :
150°C TJ
Number of Terminations :
3
Vce Saturation (Max) @ Ib, Ic :
500mV @ 200mA, 1A
Package / Case :
TO-225AA, TO-126-3
Pin Count :
3
Qualification Status :
Not Qualified
Mounting Type :
Through Hole
Polarity/Channel Type :
PNP
Emitter Base Voltage (VEBO) :
6V
Base Part Number :
BULT3
Number of Pins :
3
Transistor Type :
PNP
Collector Emitter Breakdown Voltage :
200V
Element Configuration :
Single
Terminal Finish :
Matte Tin (Sn)
Packaging :
Tube
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Collector Emitter Voltage (VCEO) :
200V
DC Current Gain (hFE) (Min) @ Ic, Vce :
10 @ 10mA 5V
Pbfree Code :
yes
Max Power Dissipation :
32W
Power - Max :
32W
Reach Compliance Code :
not_compliant
Mount :
Through Hole
Transistor Application :
SWITCHING
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-609 Code :
e3
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Max Collector Current :
3A
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BULT3P3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Number of Terminations:3, Package / Case:TO-225AA, TO-126-3, Mounting Type:Through Hole, Base Part Number:BULT3, Number of Pins:3, BULT3P3 pinout, BULT3P3 datasheet PDF, BULT3P3 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BULT3P3 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BULT3P3


PNP 150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole

BULT3P3 Overview


In this device, the DC current gain is 10 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 200mA, 1A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Maximum collector currents can be below 3A volts.

BULT3P3 Features


the DC current gain for this device is 10 @ 10mA 5V
the vce saturation(Max) is 500mV @ 200mA, 1A
the emitter base voltage is kept at 6V


BULT3P3 Applications


There are a lot of STMicroelectronics
BULT3P3 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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