BULT118
- Mfr.Part #
- BULT118
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 2A SOT32-3
- Stock
- 13,962
- In Stock :
- 13,962
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- HTS Code :
- 8541.29.00.95
- Number of Terminations :
- 3
- Mount :
- Through Hole
- VCEsat-Max :
- 1.5 V
- Package / Case :
- TO-225AA, TO-126-3
- Collector Emitter Voltage (VCEO) :
- 400V
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Turn Off Time-Max (toff) :
- 4900ns
- Voltage - Rated DC :
- 400V
- Radiation Hardening :
- No
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 10
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 500mA 5V
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 700V
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Current Rating :
- 2A
- Emitter Base Voltage (VEBO) :
- 9V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 45W
- Base Part Number :
- BULT118
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 400V
- Max Collector Current :
- 2A
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 400mA, 2A
- JESD-609 Code :
- e0
- Number of Pins :
- 3
- Max Power Dissipation :
- 45W
- Current - Collector Cutoff (Max) :
- 250μA
- Datasheets
- BULT118

NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
BULT118 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 500mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 400mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.Its current rating is 2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 2A volts.
BULT118 Features
the DC current gain for this device is 10 @ 500mA 5V
the vce saturation(Max) is 1.5V @ 400mA, 2A
the emitter base voltage is kept at 9V
the current rating of this device is 2A
BULT118 Applications
There are a lot of STMicroelectronics
BULT118 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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