BULT118

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Mfr.Part #
BULT118
Manufacturer
STMicroelectronics
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 400V 2A SOT32-3
Stock
13,962
In Stock :
13,962

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
HTS Code :
8541.29.00.95
Number of Terminations :
3
Mount :
Through Hole
VCEsat-Max :
1.5 V
Package / Case :
TO-225AA, TO-126-3
Collector Emitter Voltage (VCEO) :
400V
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Element Configuration :
Single
Mounting Type :
Through Hole
Turn Off Time-Max (toff) :
4900ns
Voltage - Rated DC :
400V
Radiation Hardening :
No
Packaging :
Tube
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Operating Temperature :
150°C TJ
hFE Min :
10
Peak Reflow Temperature (Cel) :
260
Lead Free :
Lead Free
REACH SVHC :
No SVHC
DC Current Gain (hFE) (Min) @ Ic, Vce :
10 @ 500mA 5V
Transistor Type :
NPN
Collector Base Voltage (VCBO) :
700V
Polarity/Channel Type :
NPN
Terminal Finish :
Tin/Lead (Sn/Pb)
Current Rating :
2A
Emitter Base Voltage (VEBO) :
9V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation :
45W
Base Part Number :
BULT118
Number of Elements :
1
Collector Emitter Breakdown Voltage :
400V
Max Collector Current :
2A
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 400mA, 2A
JESD-609 Code :
e0
Number of Pins :
3
Max Power Dissipation :
45W
Current - Collector Cutoff (Max) :
250μA
Datasheets
BULT118
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BULT118 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-225AA, TO-126-3, Mounting Type:Through Hole, Operating Temperature:150°C TJ, Base Part Number:BULT118, Number of Pins:3, BULT118 pinout, BULT118 datasheet PDF, BULT118 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BULT118 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BULT118


NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole

BULT118 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 500mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 400mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.Its current rating is 2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 2A volts.

BULT118 Features


the DC current gain for this device is 10 @ 500mA 5V
the vce saturation(Max) is 1.5V @ 400mA, 2A
the emitter base voltage is kept at 9V
the current rating of this device is 2A


BULT118 Applications


There are a lot of STMicroelectronics
BULT118 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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