BULT118M
- Mfr.Part #
- BULT118M
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 2A SOT32-3
- Stock
- 3,436
- In Stock :
- 3,436
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Voltage - Collector Emitter Breakdown (Max) :
- 400V
- Package / Case :
- TO-225AA, TO-126-3
- Power - Max :
- 45W
- Current - Collector (Ic) (Max) :
- 2A
- Collector Emitter Breakdown Voltage :
- 400V
- Max Collector Current :
- 2A
- Current - Collector Cutoff (Max) :
- 250μA
- Collector Emitter Voltage (VCEO) :
- 1.5V
- Mount :
- Through Hole
- Max Power Dissipation :
- 45W
- Base Part Number :
- BULT118
- Packaging :
- Tube
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 500mA 5V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 400mA, 2A
- Supplier Device Package :
- SOT-32-3
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- BULT118M

NPN 150°C TJ 250μA TO-225AA, TO-126-3 Tube Through Hole
BULT118M Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 500mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 400mA, 2A.SOT-32-3 is the supplier device package for this product.This device displays a 400V maximum voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 2A volts.
BULT118M Features
the DC current gain for this device is 10 @ 500mA 5V
the vce saturation(Max) is 1.5V @ 400mA, 2A
the supplier device package of SOT-32-3
BULT118M Applications
There are a lot of STMicroelectronics
BULT118M applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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