BULT106D
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- Mfr.Part #
- BULT106D
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 230V 2A SOT32-3
- Stock
- 588
- In Stock ：
- 588
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 250μA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 1A 5V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Base Part Number :
- BULT106
- Collector Emitter Voltage (VCEO) :
- 230V
- Max Power Dissipation :
- 32W
- Element Configuration :
- Single
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 230V
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- NPN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 400mA, 2A
- Package / Case :
- TO-225AA, TO-126-3
- Emitter Base Voltage (VEBO) :
- 9V
- Max Collector Current :
- 2A
- Power - Max :
- 32W
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Reach Compliance Code :
- Unknown
- Datasheets
- BULT106D
NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
BULT106D Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10 @ 1A 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 9V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 2A volts.
BULT106D Features
the DC current gain for this device is 10 @ 1A 5V
the vce saturation(Max) is 1.2V @ 400mA, 2A
the emitter base voltage is kept at 9V
BULT106D Applications
There are a lot of STMicroelectronics
BULT106D applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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