BULB7216T4
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- Mfr.Part #
- BULB7216T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRANS NPN 700V 3A D2PAK
- Stock
- 46
- In Stock ：
- 46
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 12V
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- hFE Min :
- 7
- Max Power Dissipation :
- 80W
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 700V
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 30
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 4 @ 2A 5V
- Peak Reflow Temperature (Cel) :
- 245
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 4
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Contact Plating :
- Tin
- JESD-30 Code :
- R-PSSO-G2
- Terminal Form :
- Gull wing
- Max Collector Current :
- 3A
- Base Part Number :
- BULB721
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 100μA
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 80mA, 800mA
- Collector Emitter Breakdown Voltage :
- 700V
- Number of Terminations :
- 2
- Transistor Type :
- NPN
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 80W
- Element Configuration :
- Single
- Datasheets
- BULB7216T4
BULB7216T4 Documents
NPN 150°C TJ 100μA 1 Elements 2 Terminations SILICON NPN TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tape & Reel (TR) Surface Mount
BULB7216T4 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 4 @ 2A 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 80mA, 800mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 12V.During maximum operation, collector current can be as low as 3A volts.
BULB7216T4 Features
the DC current gain for this device is 4 @ 2A 5V
the vce saturation(Max) is 3V @ 80mA, 800mA
the emitter base voltage is kept at 12V
BULB7216T4 Applications
There are a lot of STMicroelectronics
BULB7216T4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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