BULB49DT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - Bipolar (BJT) - Single

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

Factory Lead Time :

8 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Number of Terminations :

2

Mount :

Surface Mount

JESD-609 Code :

e3

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

NPN

Max Collector Current :

5A

Emitter Base Voltage (VEBO) :

10V

Vce Saturation (Max) @ Ib, Ic :

1.2V @ 800mA, 4A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins :

3

Contact Plating :

Tin

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

450V

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

100μA

Mounting Type :

Surface Mount

hFE Min :

10

Pin Count :

4

Collector Base Voltage (VCBO) :

850V

Power Dissipation :

80W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

450V

Operating Temperature :

150°C TJ

Peak Reflow Temperature (Cel) :

245

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Base Part Number :

BULB49

Transistor Type :

NPN

JESD-30 Code :

R-PSSO-G2

Max Power Dissipation :

80W

DC Current Gain (hFE) (Min) @ Ic, Vce :

4 @ 7A 10V