BULB49DT4

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Mfr.Part #
BULB49DT4
Manufacturer
STMicroelectronics
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
TRANS NPN 450V 5A D2PAK
Stock
25,369
In Stock :
25,369

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting Type :
Surface Mount
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mount :
Surface Mount
Time@Peak Reflow Temperature-Max (s) :
30
Pin Count :
4
Transistor Type :
NPN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
150°C TJ
Number of Elements :
1
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Factory Lead Time :
8 Weeks
Terminal Form :
Gull wing
Contact Plating :
Tin
Packaging :
Tape and Reel (TR)
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Collector Emitter Breakdown Voltage :
450V
Base Part Number :
BULB49
JESD-30 Code :
R-PSSO-G2
Number of Terminations :
2
Collector Emitter Voltage (VCEO) :
450V
hFE Min :
10
Max Collector Current :
5A
Number of Pins :
3
Vce Saturation (Max) @ Ib, Ic :
1.2V @ 800mA, 4A
Collector Base Voltage (VCBO) :
850V
DC Current Gain (hFE) (Min) @ Ic, Vce :
4 @ 7A 10V
Power Dissipation :
80W
Max Power Dissipation :
80W
Transistor Application :
SWITCHING
Current - Collector Cutoff (Max) :
100μA
Element Configuration :
Single
Polarity/Channel Type :
NPN
Radiation Hardening :
No
Peak Reflow Temperature (Cel) :
245
JESD-609 Code :
e3
Emitter Base Voltage (VEBO) :
10V
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BULB49DT4 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:150°C TJ, Base Part Number:BULB49, Number of Terminations:2, Number of Pins:3, BULB49DT4 pinout, BULB49DT4 datasheet PDF, BULB49DT4 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BULB49DT4 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BULB49DT4


NPN 150°C TJ 100μA 1 Elements 2 Terminations SILICON NPN TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tape & Reel (TR) Surface Mount

BULB49DT4 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 4 @ 7A 10V.When VCE saturation is 1.2V @ 800mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 10V can achieve high levels of efficiency.A maximum collector current of 5A volts can be achieved.

BULB49DT4 Features


the DC current gain for this device is 4 @ 7A 10V
the vce saturation(Max) is 1.2V @ 800mA, 4A
the emitter base voltage is kept at 10V


BULB49DT4 Applications


There are a lot of STMicroelectronics
BULB49DT4 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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