BULB49DT4
- Mfr.Part #
- BULB49DT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRANS NPN 450V 5A D2PAK
- Stock
- 25,369
- In Stock :
- 25,369
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Pin Count :
- 4
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Factory Lead Time :
- 8 Weeks
- Terminal Form :
- Gull wing
- Contact Plating :
- Tin
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 450V
- Base Part Number :
- BULB49
- JESD-30 Code :
- R-PSSO-G2
- Number of Terminations :
- 2
- Collector Emitter Voltage (VCEO) :
- 450V
- hFE Min :
- 10
- Max Collector Current :
- 5A
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 800mA, 4A
- Collector Base Voltage (VCBO) :
- 850V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 4 @ 7A 10V
- Power Dissipation :
- 80W
- Max Power Dissipation :
- 80W
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 100μA
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 245
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 10V
- Datasheets
- BULB49DT4
BULB49DT4 Documents

NPN 150°C TJ 100μA 1 Elements 2 Terminations SILICON NPN TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tape & Reel (TR) Surface Mount
BULB49DT4 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 4 @ 7A 10V.When VCE saturation is 1.2V @ 800mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 10V can achieve high levels of efficiency.A maximum collector current of 5A volts can be achieved.
BULB49DT4 Features
the DC current gain for this device is 4 @ 7A 10V
the vce saturation(Max) is 1.2V @ 800mA, 4A
the emitter base voltage is kept at 10V
BULB49DT4 Applications
There are a lot of STMicroelectronics
BULB49DT4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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