BULB39D-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation :

70W

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Operating Temperature :

150°C TJ

Base Part Number :

BULB39

Radiation Hardening :

No

Emitter Base Voltage (VEBO) :

9V

Min Operating Temperature :

-65°C

Mount :

Surface Mount

Collector Base Voltage (VCBO) :

800V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Contact Plating :

Tin

Current - Collector Cutoff (Max) :

100μA

Supplier Device Package :

D2PAK

Max Operating Temperature :

150°C

Number of Elements :

1

Collector Emitter Breakdown Voltage :

450V

Element Configuration :

Single

Max Collector Current :

4A

Polarity :

NPN

Voltage - Collector Emitter Breakdown (Max) :

450V

Vce Saturation (Max) @ Ib, Ic :

1.1V @ 500mA, 2.5A

Collector Emitter Voltage (VCEO) :

450V

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 10mA 5V

Current - Collector (Ic) (Max) :

4A

Transistor Type :

NPN

Power - Max :

70W

Packaging :

Tube

Mounting Type :

Surface Mount

Max Power Dissipation :

70W

RoHS Status :

ROHS3 Compliant