BULB7216-1

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Mfr.Part #
BULB7216-1
Manufacturer
STMicroelectronics
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Datasheet
Download
Description
TRANS NPN 700V 3A I2PAK
Stock
48,209
In Stock :
48,209

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Emitter Base Voltage (VEBO) :
12V
Number of Elements :
1
Vce Saturation (Max) @ Ib, Ic :
3V @ 80mA, 800mA
Packaging :
Tube
Power - Max :
80W
Current - Collector Cutoff (Max) :
100μA
Max Power Dissipation :
80W
RoHS Status :
ROHS3 Compliant
Collector Emitter Breakdown Voltage :
700V
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
DC Current Gain (hFE) (Min) @ Ic, Vce :
4 @ 2A 5V
Mounting Type :
Through Hole
Radiation Hardening :
No
Mount :
Through Hole
Element Configuration :
Single
Transistor Type :
NPN
Operating Temperature :
150°C TJ
Pin Count :
3
Number of Terminations :
3
Collector Emitter Voltage (VCEO) :
700V
Base Part Number :
BULB721
Package / Case :
TO-262-3 Long Leads, I2Pak, TO-262AA
Polarity/Channel Type :
NPN
Number of Pins :
3
Max Collector Current :
3A
Datasheets
BULB7216-1
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BULB7216-1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:150°C TJ, Number of Terminations:3, Base Part Number:BULB721, Package / Case:TO-262-3 Long Leads, I2Pak, TO-262AA, Number of Pins:3, BULB7216-1 pinout, BULB7216-1 datasheet PDF, BULB7216-1 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BULB7216-1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BULB7216-1


NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-262-3 Long Leads, I2Pak, TO-262AA Tube Through Hole

BULB7216-1 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 4 @ 2A 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 80mA, 800mA.The emitter base voltage can be kept at 12V for high efficiency.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.

BULB7216-1 Features


the DC current gain for this device is 4 @ 2A 5V
the vce saturation(Max) is 3V @ 80mA, 800mA
the emitter base voltage is kept at 12V


BULB7216-1 Applications


There are a lot of STMicroelectronics
BULB7216-1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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