BULB7216-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - Bipolar (BJT) - Single

Base Part Number :

BULB721

DC Current Gain (hFE) (Min) @ Ic, Vce :

4 @ 2A 5V

Pin Count :

3

Transistor Element Material :

SILICON

Max Collector Current :

3A

Number of Elements :

1

Collector Emitter Breakdown Voltage :

700V

Max Power Dissipation :

80W

Polarity/Channel Type :

NPN

Collector Emitter Voltage (VCEO) :

700V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Current - Collector Cutoff (Max) :

100μA

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

12V

Transistor Type :

NPN

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Number of Pins :

3

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

3V @ 80mA, 800mA

Power - Max :

80W

Element Configuration :

Single

Mounting Type :

Through Hole

Number of Terminations :

3

Packaging :

Tube