BUK7K8R7-40EX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

40V

Factory Lead Time :

12 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

2 N-Channel (Dual)

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 1mA

Continuous Drain Current (ID) :

30A

Pulsed Drain Current-Max (IDM) :

225A

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 15A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

53W

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

40V

Input Capacitance (Ciss) (Max) @ Vds :

1439pF @ 25V

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Power - Max :

53W

Transistor Element Material :

SILICON

Package / Case :

SOT-1205, 8-LFPAK56

Number of Pins :

8

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

21.8nC @ 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

6

Pin Count :

8

Packaging :

Tape and Reel (TR)

Published :

2013

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Reference Standard :

AEC-Q101; IEC-60134

FET Feature :

Standard

JESD-30 Code :

R-PDSO-G6