BUK7105-40AIE,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

5

FET Type :

N-Channel

FET Feature :

Current Sensing

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G4

Drain to Source Breakdown Voltage :

40V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

620A

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4V @ 1mA

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

4

Case Connection :

DRAIN

Power Dissipation :

272W

Input Capacitance (Ciss) (Max) @ Vds :

5000pF @ 25V

Turn-Off Delay Time :

155 ns

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

272W Tc

Radiation Hardening :

No

Turn On Delay Time :

35 ns

Surface Mount :

yes

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Max Dual Supply Voltage :

40V

Series :

Automotive, AEC-Q101, TrenchMOS™

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Contact Plating :

Tin

RoHS Status :

RoHS Compliant

Pin Count :

5

Element Configuration :

Single

Rise Time :

115ns

Fall Time (Typ) :

110 ns

Rds On (Max) @ Id, Vgs :

5m Ω @ 50A, 10V

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-263-5, D2Pak (4 Leads + Tab), TO-263BB

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Continuous Drain Current (ID) :

155A

Gate Charge (Qg) (Max) @ Vgs :

127nC @ 10V