BUK7K32-100EX

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Arrays

DS Breakdown Voltage-Min :

100V

Pulsed Drain Current-Max (IDM) :

116A

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Pin Count :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

29A

Rds On (Max) @ Id, Vgs :

27.5m Ω @ 5A, 10V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Package / Case :

SOT-1205, 8-LFPAK56

Power - Max :

64W

JESD-30 Code :

R-PDSO-G6

Avalanche Energy Rating (Eas) :

67 mJ

Published :

2013

Vgs(th) (Max) @ Id :

4V @ 1mA

Drain to Source Voltage (Vdss) :

100V

Transistor Application :

SWITCHING

Factory Lead Time :

12 Weeks

Reference Standard :

AEC-Q101; IEC-60134

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Max Power Dissipation :

64W

FET Feature :

Standard

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

2137pF @ 25V

Number of Terminations :

6

FET Type :

2 N-Channel (Dual)

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.0275Ohm

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Mount :

Surface Mount

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED