BUK7K32-100EX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Arrays

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

29A

Number of Terminations :

6

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.0275Ohm

Terminal Form :

Gull wing

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Published :

2013

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

67 mJ

FET Type :

2 N-Channel (Dual)

Rds On (Max) @ Id, Vgs :

27.5m Ω @ 5A, 10V

Operating Temperature :

-55°C~175°C TJ

DS Breakdown Voltage-Min :

100V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-G6

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Power - Max :

64W

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

100V

FET Feature :

Standard

Number of Elements :

2

Pin Count :

8

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Current-Max (IDM) :

116A

RoHS Status :

ROHS3 Compliant

Package / Case :

SOT-1205, 8-LFPAK56

Input Capacitance (Ciss) (Max) @ Vds :

2137pF @ 25V

Max Power Dissipation :

64W

Reference Standard :

AEC-Q101; IEC-60134

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 1mA