BUH51G
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- Mfr.Part #
- BUH51G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 500V 3A TO126
- Stock
- 3,065
- In Stock ：
- 3,065
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100μA
- Supplier Device Package :
- TO-225AA
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 1A
- Operating Temperature :
- -65°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Packaging :
- Bulk
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 50W
- Package / Case :
- TO-225AA, TO-126-3
- Frequency - Transition :
- 23MHz
- Current - Collector (Ic) (Max) :
- 3A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 8 @ 1A 1V
- Voltage - Collector Emitter Breakdown (Max) :
- 500V
- Mounting Type :
- Through Hole
- Series :
- SWITCHMODE™
- Datasheets
- BUH51G
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NPN -65°C~150°C TJ 100μA TO-225AA, TO-126-3 Bulk Through Hole
BUH51G Overview
In this device, the DC current gain is 8 @ 1A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 200mA, 1A.Supplier device package TO-225AA comes with the product.The device exhibits a collector-emitter breakdown at 500V.
BUH51G Features
the DC current gain for this device is 8 @ 1A 1V
the vce saturation(Max) is 500mV @ 200mA, 1A
the supplier device package of TO-225AA
BUH51G Applications
There are a lot of Rochester Electronics, LLC
BUH51G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| BUH50 | onsemi | 41,277 | TRANS NPN 500V 4A TO220 |
| BUH50G | onsemi | 9,119 | TRANS NPN 500V 4A TO220 |
| BUH51 | onsemi | 8,874 | TRANS NPN 500V 3A TO126 |
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