BUH50
- Mfr.Part #
- BUH50
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 500V 4A TO220
- Stock
- 41,277
- In Stock :
- 41,277
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 5 @ 2A 5V
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Series :
- SWITCHMODE™
- Peak Reflow Temperature (Cel) :
- 240
- Qualification Status :
- Not Qualified
- hFE Min :
- 7
- Mounting Type :
- Through Hole
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Transistor Application :
- SWITCHING
- RoHS Status :
- Non-RoHS Compliant
- Collector Base Voltage (VCBO) :
- 800V
- Current Rating :
- 4A
- Max Collector Current :
- 4A
- Pbfree Code :
- No
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 500V
- Collector Emitter Voltage (VCEO) :
- 1V
- Surface Mount :
- No
- Case Connection :
- COLLECTOR
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 1A, 3A
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 4MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Current - Collector Cutoff (Max) :
- 100μA
- Emitter Base Voltage (VEBO) :
- 9V
- Collector Emitter Saturation Voltage :
- 500mV
- Element Configuration :
- Single
- Voltage - Rated DC :
- 500V
- Lead Free :
- Contains Lead
- JESD-609 Code :
- e0
- Published :
- 2009
- Reach Compliance Code :
- not_compliant
- Operating Temperature :
- -65°C~150°C TJ
- Package / Case :
- TO-220-3
- Transition Frequency :
- 4MHz
- Max Power Dissipation :
- 50W
- JEDEC-95 Code :
- TO-220AB
- Datasheets
- BUH50
BUH50 Documents

NPN -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUH50 Overview
This device has a DC current gain of 5 @ 2A 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 1V @ 1A, 3A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 9V.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 4MHz.A maximum collector current of 4A volts is possible.
BUH50 Features
the DC current gain for this device is 5 @ 2A 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 1V @ 1A, 3A
the emitter base voltage is kept at 9V
the current rating of this device is 4A
a transition frequency of 4MHz
BUH50 Applications
There are a lot of ON Semiconductor
BUH50 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| BUH50G | onsemi | 9,119 | TRANS NPN 500V 4A TO220 |
| BUH51 | onsemi | 8,874 | TRANS NPN 500V 3A TO126 |
| BUH51G | onsemi | 3,065 | TRANS NPN 500V 3A TO126 |
















