BUH50

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Mfr.Part #
BUH50
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 500V 4A TO220
Stock
41,277
In Stock :
41,277

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
5 @ 2A 5V
Transistor Application :
SWITCHING
Current Rating :
4A
Additional Feature :
LEADFORM OPTIONS ARE AVAILABLE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Max Power Dissipation :
50W
Vce Saturation (Max) @ Ib, Ic :
1V @ 1A, 3A
Qualification Status :
Not Qualified
Voltage - Rated DC :
500V
hFE Min :
7
Emitter Base Voltage (VEBO) :
9V
Published :
2009
Current - Collector Cutoff (Max) :
100μA
Number of Pins :
3
Element Configuration :
Single
Collector Emitter Breakdown Voltage :
500V
Pbfree Code :
No
Terminal Finish :
Tin/Lead (Sn/Pb)
Transistor Element Material :
SILICON
Number of Terminations :
3
Lead Free :
Contains Lead
Collector Emitter Voltage (VCEO) :
1V
Pin Count :
3
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 week ago)
JESD-609 Code :
e0
Max Collector Current :
4A
Collector Emitter Saturation Voltage :
500mV
Mounting Type :
Through Hole
Case Connection :
COLLECTOR
Series :
SWITCHMODE™
Reach Compliance Code :
not_compliant
JEDEC-95 Code :
TO-220AB
Peak Reflow Temperature (Cel) :
240
Packaging :
Tube
Surface Mount :
No
Operating Temperature :
-65°C~150°C TJ
Polarity/Channel Type :
NPN
Time@Peak Reflow Temperature-Max (s) :
30
Transistor Type :
NPN
Package / Case :
TO-220-3
Collector Base Voltage (VCBO) :
800V
Transition Frequency :
4MHz
ECCN Code :
EAR99
Gain Bandwidth Product :
4MHz
RoHS Status :
Non-RoHS Compliant
Datasheets
BUH50
Introducing Transistors - Bipolar (BJT) - Single onsemi BUH50 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-65°C~150°C TJ, Package / Case:TO-220-3, BUH50 pinout, BUH50 datasheet PDF, BUH50 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BUH50 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BUH50


NPN -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BUH50 Overview


This device has a DC current gain of 5 @ 2A 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 1V @ 1A, 3A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 9V.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 4MHz.A maximum collector current of 4A volts is possible.

BUH50 Features


the DC current gain for this device is 5 @ 2A 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 1V @ 1A, 3A
the emitter base voltage is kept at 9V
the current rating of this device is 4A
a transition frequency of 4MHz


BUH50 Applications


There are a lot of ON Semiconductor
BUH50 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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