BUH50G

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Mfr.Part #
BUH50G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 500V 4A TO220
Stock
9,119
In Stock :
9,119

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Package / Case :
TO-220-3
Additional Feature :
LEADFORM OPTIONS ARE AVAILABLE
Peak Reflow Temperature (Cel) :
260
Frequency - Transition :
4MHz
Configuration :
Single
Terminal Finish :
MATTE TIN
Vce Saturation (Max) @ Ib, Ic :
1V @ 1A, 3A
Pin Count :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
5 @ 2A 5V
Pbfree Code :
yes
JESD-30 Code :
R-PSFM-T3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Case Connection :
COLLECTOR
Transistor Application :
SWITCHING
Number of Elements :
1
JEDEC-95 Code :
TO-220AB
Operating Temperature :
-65°C~150°C TJ
Terminal Position :
Single
Current - Collector Cutoff (Max) :
100μA
Surface Mount :
No
RoHS Status :
ROHS3 Compliant
Current - Collector (Ic) (Max) :
4A
Polarity/Channel Type :
NPN
Series :
SWITCHMODE™
Mounting Type :
Through Hole
Packaging :
Tube
Qualification Status :
COMMERCIAL
Transistor Element Material :
SILICON
Voltage - Collector Emitter Breakdown (Max) :
500V
JESD-609 Code :
e3
Transistor Type :
NPN
Transition Frequency :
4MHz
Power - Max :
50W
Reach Compliance Code :
Unknown
Number of Terminations :
3
Time@Peak Reflow Temperature-Max (s) :
40
Datasheets
BUH50G
Introducing Transistors - Bipolar (BJT) - Single onsemi BUH50G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Operating Temperature:-65°C~150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, BUH50G pinout, BUH50G datasheet PDF, BUH50G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BUH50G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BUH50G


NPN -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BUH50G Overview


This device has a DC current gain of 5 @ 2A 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1V @ 1A, 3A means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 4MHz.Collector Emitter Breakdown occurs at 500VV - Maximum voltage.

BUH50G Features


the DC current gain for this device is 5 @ 2A 5V
the vce saturation(Max) is 1V @ 1A, 3A
a transition frequency of 4MHz


BUH50G Applications


There are a lot of Rochester Electronics, LLC
BUH50G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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