BUH51

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Mfr.Part #
BUH51
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 500V 3A TO126
Stock
8,874
In Stock :
8,874

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
hFE Min :
8
Collector Emitter Saturation Voltage :
300mV
Mount :
Through Hole
ECCN Code :
EAR99
Vce Saturation (Max) @ Ib, Ic :
500mV @ 200mA, 1A
Collector Emitter Breakdown Voltage :
500V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Voltage (VCEO) :
500mV
Operating Temperature :
-65°C~150°C TJ
Voltage - Rated DC :
800V
Reach Compliance Code :
not_compliant
Gain Bandwidth Product :
23MHz
Number of Elements :
1
DC Current Gain (hFE) (Min) @ Ic, Vce :
8 @ 1A 1V
Number of Pins :
3
Qualification Status :
Not Qualified
Packaging :
Bulk
Emitter Base Voltage (VEBO) :
10V
Terminal Finish :
Tin/Lead (Sn/Pb)
Current Rating :
3A
Time@Peak Reflow Temperature-Max (s) :
30
Current - Collector Cutoff (Max) :
100μA
Transistor Element Material :
SILICON
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 day ago)
Series :
SWITCHMODE™
RoHS Status :
Non-RoHS Compliant
JESD-609 Code :
e0
Transistor Application :
SWITCHING
Transition Frequency :
23MHz
Max Power Dissipation :
50W
Pin Count :
3
Max Collector Current :
3A
Pbfree Code :
No
Element Configuration :
Single
Published :
2006
Transistor Type :
NPN
Polarity/Channel Type :
NPN
Collector Base Voltage (VCBO) :
800V
Peak Reflow Temperature (Cel) :
240
Package / Case :
TO-225AA, TO-126-3
Mounting Type :
Through Hole
Lead Free :
Contains Lead
Number of Terminations :
3
Datasheets
BUH51
Introducing Transistors - Bipolar (BJT) - Single onsemi BUH51 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Number of Pins:3, Package / Case:TO-225AA, TO-126-3, Mounting Type:Through Hole, Number of Terminations:3, BUH51 pinout, BUH51 datasheet PDF, BUH51 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BUH51 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BUH51


NPN -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole

BUH51 Overview


This device has a DC current gain of 8 @ 1A 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 300mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 10V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 3A.In this part, there is a transition frequency of 23MHz.The maximum collector current is 3A volts.

BUH51 Features


the DC current gain for this device is 8 @ 1A 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 500mV @ 200mA, 1A
the emitter base voltage is kept at 10V
the current rating of this device is 3A
a transition frequency of 23MHz


BUH51 Applications


There are a lot of ON Semiconductor
BUH51 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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