BUH51
- Mfr.Part #
- BUH51
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 500V 3A TO126
- Stock
- 8,874
- In Stock :
- 8,874
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 8
- Collector Emitter Saturation Voltage :
- 300mV
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 1A
- Collector Emitter Breakdown Voltage :
- 500V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 500mV
- Operating Temperature :
- -65°C~150°C TJ
- Voltage - Rated DC :
- 800V
- Reach Compliance Code :
- not_compliant
- Gain Bandwidth Product :
- 23MHz
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 8 @ 1A 1V
- Number of Pins :
- 3
- Qualification Status :
- Not Qualified
- Packaging :
- Bulk
- Emitter Base Voltage (VEBO) :
- 10V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Current Rating :
- 3A
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Current - Collector Cutoff (Max) :
- 100μA
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Series :
- SWITCHMODE™
- RoHS Status :
- Non-RoHS Compliant
- JESD-609 Code :
- e0
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 23MHz
- Max Power Dissipation :
- 50W
- Pin Count :
- 3
- Max Collector Current :
- 3A
- Pbfree Code :
- No
- Element Configuration :
- Single
- Published :
- 2006
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 800V
- Peak Reflow Temperature (Cel) :
- 240
- Package / Case :
- TO-225AA, TO-126-3
- Mounting Type :
- Through Hole
- Lead Free :
- Contains Lead
- Number of Terminations :
- 3
- Datasheets
- BUH51
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NPN -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BUH51 Overview
This device has a DC current gain of 8 @ 1A 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 300mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 10V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 3A.In this part, there is a transition frequency of 23MHz.The maximum collector current is 3A volts.
BUH51 Features
the DC current gain for this device is 8 @ 1A 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 500mV @ 200mA, 1A
the emitter base voltage is kept at 10V
the current rating of this device is 3A
a transition frequency of 23MHz
BUH51 Applications
There are a lot of ON Semiconductor
BUH51 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| BUH50 | onsemi | 41,277 | TRANS NPN 500V 4A TO220 |
| BUH50G | onsemi | 9,119 | TRANS NPN 500V 4A TO220 |
| BUH51G | onsemi | 3,065 | TRANS NPN 500V 3A TO126 |
















