BUB323ZT4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Contact Plating :

Tin

DC Current Gain (hFE) (Min) @ Ic, Vce :

500 @ 5A 4.6V

Power Dissipation :

150W

Case Connection :

COLLECTOR

Collector Emitter Breakdown Voltage :

350V

Number of Terminations :

2

Current Rating :

10A

Base Part Number :

BUB323

JESD-609 Code :

e3

Continuous Collector Current :

10A

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Transistor Type :

NPN - Darlington

Voltage - Rated DC :

350V

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Transition Frequency :

2MHz

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Current - Collector Cutoff (Max) :

100μA

Factory Lead Time :

13 Weeks

Emitter Base Voltage (VEBO) :

6V

JESD-30 Code :

R-PSSO-G2

Lifecycle Status :

ACTIVE (Last Updated: 13 hours ago)

Lead Free :

Lead Free

Collector Emitter Saturation Voltage :

1.6V

Terminal Form :

Gull wing

Collector Emitter Voltage (VCEO) :

350V

Max Power Dissipation :

150W

Pin Count :

3

REACH SVHC :

No SVHC

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

1.7V @ 250mA, 10A

Halogen Free :

Halogen Free

Element Configuration :

Single

Frequency - Transition :

2MHz

Pbfree Code :

yes

Max Collector Current :

10A

hFE Min :

500

Published :

2005

Transistor Element Material :

SILICON

Max Breakdown Voltage :

350V

Operating Temperature :

-65°C~175°C TJ

Polarity :

NPN