BUB323ZT4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e3

Factory Lead Time :

13 Weeks

Lead Free :

Lead Free

Number of Elements :

1

Frequency - Transition :

2MHz

Number of Terminations :

2

Number of Pins :

3

Power Dissipation :

150W

hFE Min :

500

Published :

2005

Max Breakdown Voltage :

350V

Element Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

500 @ 5A 4.6V

Case Connection :

COLLECTOR

Lifecycle Status :

ACTIVE (Last Updated: 13 hours ago)

Pbfree Code :

yes

Base Part Number :

BUB323

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Polarity :

NPN

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Current Rating :

10A

Collector Emitter Saturation Voltage :

1.6V

Current - Collector Cutoff (Max) :

100μA

Transistor Type :

NPN - Darlington

Collector Emitter Breakdown Voltage :

350V

Pin Count :

3

Max Collector Current :

10A

Operating Temperature :

-65°C~175°C TJ

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Max Power Dissipation :

150W

REACH SVHC :

No SVHC

Emitter Base Voltage (VEBO) :

6V

Vce Saturation (Max) @ Ib, Ic :

1.7V @ 250mA, 10A

Surface Mount :

yes

Transistor Application :

SWITCHING

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Halogen Free :

Halogen Free

Collector Emitter Voltage (VCEO) :

350V

Contact Plating :

Tin

Time@Peak Reflow Temperature-Max (s) :

40

Continuous Collector Current :

10A

Voltage - Rated DC :

350V

Transition Frequency :

2MHz