BUB323ZG
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- Mfr.Part #
- BUB323ZG
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRANS NPN DARL 350V 10A D2PAK
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 1.6V
- Element Configuration :
- Single
- Pin Count :
- 3
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- COLLECTOR
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Factory Lead Time :
- 2 Weeks
- Transistor Type :
- NPN - Darlington
- Base Part Number :
- BUB323
- Halogen Free :
- Halogen Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Published :
- 2005
- Surface Mount :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 1.7V @ 250mA, 10A
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Max Collector Current :
- 10A
- Radiation Hardening :
- No
- Polarity :
- NPN
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 350V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 5A 4.6V
- Operating Temperature :
- -65°C~175°C TJ
- Frequency - Transition :
- 2MHz
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Terminations :
- 2
- Current Rating :
- 10A
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- hFE Min :
- 150
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 350V
- Transition Frequency :
- 2MHz
- Max Power Dissipation :
- 150W
- JESD-30 Code :
- R-PSSO-G2
- Voltage - Rated DC :
- 350V
- Current - Collector Cutoff (Max) :
- 100μA
- Datasheets
- BUB323ZG
BUB323ZG Documents
NPN - Darlington -65°C~175°C TJ 100μA 1 Elements 2 Terminations SILICON TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tube Surface Mount
BUB323ZG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 500 @ 5A 4.6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.6V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.7V @ 250mA, 10A.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 10A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 2MHz.Single BJT transistor is possible to have a collector current as low as 10A volts at Single BJT transistors maximum.
BUB323ZG Features
the DC current gain for this device is 500 @ 5A 4.6V
a collector emitter saturation voltage of 1.6V
the vce saturation(Max) is 1.7V @ 250mA, 10A
the emitter base voltage is kept at 6V
the current rating of this device is 10A
a transition frequency of 2MHz
BUB323ZG Applications
There are a lot of ON Semiconductor
BUB323ZG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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