BUB323ZG
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- Mfr.Part #
- BUB323ZG
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRANS NPN DARL 350V 10A D2PAK
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 2MHz
- Base Part Number :
- BUB323
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- Operating Temperature :
- -65°C~175°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- hFE Min :
- 150
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 6V
- Max Power Dissipation :
- 150W
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2005
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- Surface Mount :
- yes
- Contact Plating :
- Tin
- Voltage - Rated DC :
- 350V
- Factory Lead Time :
- 2 Weeks
- JESD-30 Code :
- R-PSSO-G2
- Transistor Type :
- NPN - Darlington
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current Rating :
- 10A
- Packaging :
- Tube
- Number of Terminations :
- 2
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Max Collector Current :
- 10A
- Polarity :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 1.7V @ 250mA, 10A
- Collector Emitter Breakdown Voltage :
- 350V
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 5A 4.6V
- Collector Emitter Saturation Voltage :
- 1.6V
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Halogen Free :
- Halogen Free
- Collector Emitter Voltage (VCEO) :
- 350V
- Transition Frequency :
- 2MHz
- Datasheets
- BUB323ZG
NPN - Darlington -65°C~175°C TJ 100μA 1 Elements 2 Terminations SILICON TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tube Surface Mount
BUB323ZG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 500 @ 5A 4.6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.6V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.7V @ 250mA, 10A.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 10A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 2MHz.Single BJT transistor is possible to have a collector current as low as 10A volts at Single BJT transistors maximum.
BUB323ZG Features
the DC current gain for this device is 500 @ 5A 4.6V
a collector emitter saturation voltage of 1.6V
the vce saturation(Max) is 1.7V @ 250mA, 10A
the emitter base voltage is kept at 6V
the current rating of this device is 10A
a transition frequency of 2MHz
BUB323ZG Applications
There are a lot of ON Semiconductor
BUB323ZG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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