BUB323ZT4

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

350V

Transistor Element Material :

SILICON

Halogen Free :

Halogen Free

Current - Collector Cutoff (Max) :

100μA

Case Connection :

COLLECTOR

Power Dissipation :

150W

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current Rating :

10A

Transition Frequency :

2MHz

Surface Mount :

yes

Contact Plating :

Tin

DC Current Gain (hFE) (Min) @ Ic, Vce :

500 @ 5A 4.6V

REACH SVHC :

No SVHC

Pbfree Code :

yes

Mounting Type :

Surface Mount

Continuous Collector Current :

10A

Transistor Type :

NPN - Darlington

hFE Min :

500

Frequency - Transition :

2MHz

JESD-609 Code :

e3

Published :

2005

Max Power Dissipation :

150W

Number of Pins :

3

Max Collector Current :

10A

Collector Emitter Saturation Voltage :

1.6V

Max Breakdown Voltage :

350V

Pin Count :

3

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 13 hours ago)

Factory Lead Time :

13 Weeks

Element Configuration :

Single

Vce Saturation (Max) @ Ib, Ic :

1.7V @ 250mA, 10A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

350V

Base Part Number :

BUB323

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Collector Emitter Breakdown Voltage :

350V

Emitter Base Voltage (VEBO) :

6V

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-65°C~175°C TJ

Polarity :

NPN

ECCN Code :

EAR99