BUB323Z
- Mfr.Part #
- BUB323Z
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRANS NPN DARL 350V 10A D2PAK
- Stock
- 8,045
- In Stock :
- 8,045
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Reach Compliance Code :
- not_compliant
- Number of Elements :
- 1
- Max Power Dissipation :
- 150W
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 6V
- Pbfree Code :
- No
- JESD-30 Code :
- R-PSSO-G2
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Transition Frequency :
- 2MHz
- JESD-609 Code :
- e0
- Pin Count :
- 3
- Max Collector Current :
- 10A
- RoHS Status :
- Non-RoHS Compliant
- hFE Min :
- 500
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Current Rating :
- 10A
- Voltage - Rated DC :
- 350V
- Power Dissipation :
- 150W
- Peak Reflow Temperature (Cel) :
- 240
- Vce Saturation (Max) @ Ib, Ic :
- 1.7V @ 250mA, 10A
- Current - Collector Cutoff (Max) :
- 100μA
- Operating Temperature :
- -65°C~175°C TJ
- Frequency - Transition :
- 2MHz
- Continuous Collector Current :
- 10A
- Base Part Number :
- BUB323
- Number of Pins :
- 3
- Lead Free :
- Contains Lead
- Transistor Type :
- NPN - Darlington
- Collector Emitter Breakdown Voltage :
- 350V
- ECCN Code :
- EAR99
- Polarity :
- NPN
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 5A 4.6V
- Qualification Status :
- Not Qualified
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 1.7V
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 day ago)
- Published :
- 2005
- Surface Mount :
- yes
- Number of Terminations :
- 2
- Datasheets
- BUB323Z
BUB323Z Documents

NPN - Darlington -65°C~175°C TJ 100μA 1 Elements 2 Terminations SILICON TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tube Surface Mount
BUB323Z Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 500 @ 5A 4.6V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.7V @ 250mA, 10A.Single BJT transistor is recommended to keep the continuous collector voltage at 10A in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 10A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 2MHz.Single BJT transistor is possible to have a collector current as low as 10A volts at Single BJT transistors maximum.
BUB323Z Features
the DC current gain for this device is 500 @ 5A 4.6V
the vce saturation(Max) is 1.7V @ 250mA, 10A
the emitter base voltage is kept at 6V
the current rating of this device is 10A
a transition frequency of 2MHz
BUB323Z Applications
There are a lot of ON Semiconductor
BUB323Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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