BUB323Z
- Mfr.Part #
- BUB323Z
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRANS NPN DARL 350V 10A D2PAK
- Stock
- 8,045
- In Stock :
- 8,045
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Surface Mount :
- yes
- Case Connection :
- COLLECTOR
- Max Collector Current :
- 10A
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Transition Frequency :
- 2MHz
- Continuous Collector Current :
- 10A
- Number of Elements :
- 1
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 day ago)
- Peak Reflow Temperature (Cel) :
- 240
- Lead Free :
- Contains Lead
- JESD-30 Code :
- R-PSSO-G2
- Pin Count :
- 3
- RoHS Status :
- Non-RoHS Compliant
- Reach Compliance Code :
- not_compliant
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 350V
- Operating Temperature :
- -65°C~175°C TJ
- Element Configuration :
- Single
- Packaging :
- Tube
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 150W
- Current - Collector Cutoff (Max) :
- 100μA
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 5A 4.6V
- Frequency - Transition :
- 2MHz
- Polarity :
- NPN
- hFE Min :
- 500
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 1.7V @ 250mA, 10A
- Current Rating :
- 10A
- Transistor Type :
- NPN - Darlington
- Voltage - Rated DC :
- 350V
- Max Power Dissipation :
- 150W
- Published :
- 2005
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e0
- Collector Emitter Voltage (VCEO) :
- 1.7V
- Number of Terminations :
- 2
- Qualification Status :
- Not Qualified
- Base Part Number :
- BUB323
- Emitter Base Voltage (VEBO) :
- 6V
- Datasheets
- BUB323Z

NPN - Darlington -65°C~175°C TJ 100μA 1 Elements 2 Terminations SILICON TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tube Surface Mount
BUB323Z Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 500 @ 5A 4.6V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.7V @ 250mA, 10A.Single BJT transistor is recommended to keep the continuous collector voltage at 10A in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 10A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 2MHz.Single BJT transistor is possible to have a collector current as low as 10A volts at Single BJT transistors maximum.
BUB323Z Features
the DC current gain for this device is 500 @ 5A 4.6V
the vce saturation(Max) is 1.7V @ 250mA, 10A
the emitter base voltage is kept at 6V
the current rating of this device is 10A
a transition frequency of 2MHz
BUB323Z Applications
There are a lot of ON Semiconductor
BUB323Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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