BUB323Z

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Mfr.Part #
BUB323Z
Manufacturer
onsemi
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
TRANS NPN DARL 350V 10A D2PAK
Stock
8,045
In Stock :
8,045

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Time@Peak Reflow Temperature-Max (s) :
30
Reach Compliance Code :
not_compliant
Number of Elements :
1
Max Power Dissipation :
150W
Terminal Form :
Gull wing
Element Configuration :
Single
Case Connection :
COLLECTOR
Emitter Base Voltage (VEBO) :
6V
Pbfree Code :
No
JESD-30 Code :
R-PSSO-G2
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transition Frequency :
2MHz
JESD-609 Code :
e0
Pin Count :
3
Max Collector Current :
10A
RoHS Status :
Non-RoHS Compliant
hFE Min :
500
Transistor Application :
SWITCHING
Terminal Finish :
Tin/Lead (Sn/Pb)
Current Rating :
10A
Voltage - Rated DC :
350V
Power Dissipation :
150W
Peak Reflow Temperature (Cel) :
240
Vce Saturation (Max) @ Ib, Ic :
1.7V @ 250mA, 10A
Current - Collector Cutoff (Max) :
100μA
Operating Temperature :
-65°C~175°C TJ
Frequency - Transition :
2MHz
Continuous Collector Current :
10A
Base Part Number :
BUB323
Number of Pins :
3
Lead Free :
Contains Lead
Transistor Type :
NPN - Darlington
Collector Emitter Breakdown Voltage :
350V
ECCN Code :
EAR99
Polarity :
NPN
Transistor Element Material :
SILICON
DC Current Gain (hFE) (Min) @ Ic, Vce :
500 @ 5A 4.6V
Qualification Status :
Not Qualified
Mounting Type :
Surface Mount
Collector Emitter Voltage (VCEO) :
1.7V
Lifecycle Status :
OBSOLETE (Last Updated: 1 day ago)
Published :
2005
Surface Mount :
yes
Number of Terminations :
2
Introducing Transistors - Bipolar (BJT) - Single onsemi BUB323Z from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-65°C~175°C TJ, Base Part Number:BUB323, Number of Pins:3, Mounting Type:Surface Mount, Number of Terminations:2, BUB323Z pinout, BUB323Z datasheet PDF, BUB323Z amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BUB323Z ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BUB323Z


NPN - Darlington -65°C~175°C TJ 100μA 1 Elements 2 Terminations SILICON TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tube Surface Mount

BUB323Z Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 500 @ 5A 4.6V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.7V @ 250mA, 10A.Single BJT transistor is recommended to keep the continuous collector voltage at 10A in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 10A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 2MHz.Single BJT transistor is possible to have a collector current as low as 10A volts at Single BJT transistors maximum.

BUB323Z Features


the DC current gain for this device is 500 @ 5A 4.6V
the vce saturation(Max) is 1.7V @ 250mA, 10A
the emitter base voltage is kept at 6V
the current rating of this device is 10A
a transition frequency of 2MHz


BUB323Z Applications


There are a lot of ON Semiconductor
BUB323Z applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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