BUB323Z

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Mfr.Part #
BUB323Z
Manufacturer
onsemi
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
TRANS NPN DARL 350V 10A D2PAK
Stock
8,045
In Stock :
8,045

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Surface Mount :
yes
Case Connection :
COLLECTOR
Max Collector Current :
10A
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transition Frequency :
2MHz
Continuous Collector Current :
10A
Number of Elements :
1
Lifecycle Status :
OBSOLETE (Last Updated: 1 day ago)
Peak Reflow Temperature (Cel) :
240
Lead Free :
Contains Lead
JESD-30 Code :
R-PSSO-G2
Pin Count :
3
RoHS Status :
Non-RoHS Compliant
Reach Compliance Code :
not_compliant
Terminal Form :
Gull wing
Collector Emitter Breakdown Voltage :
350V
Operating Temperature :
-65°C~175°C TJ
Element Configuration :
Single
Packaging :
Tube
Mounting Type :
Surface Mount
Power Dissipation :
150W
Current - Collector Cutoff (Max) :
100μA
ECCN Code :
EAR99
Transistor Application :
SWITCHING
Number of Pins :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
500 @ 5A 4.6V
Frequency - Transition :
2MHz
Polarity :
NPN
hFE Min :
500
Time@Peak Reflow Temperature-Max (s) :
30
Terminal Finish :
Tin/Lead (Sn/Pb)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
No
Vce Saturation (Max) @ Ib, Ic :
1.7V @ 250mA, 10A
Current Rating :
10A
Transistor Type :
NPN - Darlington
Voltage - Rated DC :
350V
Max Power Dissipation :
150W
Published :
2005
Transistor Element Material :
SILICON
JESD-609 Code :
e0
Collector Emitter Voltage (VCEO) :
1.7V
Number of Terminations :
2
Qualification Status :
Not Qualified
Base Part Number :
BUB323
Emitter Base Voltage (VEBO) :
6V
Datasheets
BUB323Z
Introducing Transistors - Bipolar (BJT) - Single onsemi BUB323Z from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-65°C~175°C TJ, Mounting Type:Surface Mount, Number of Pins:3, Number of Terminations:2, Base Part Number:BUB323, BUB323Z pinout, BUB323Z datasheet PDF, BUB323Z amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BUB323Z ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BUB323Z


NPN - Darlington -65°C~175°C TJ 100μA 1 Elements 2 Terminations SILICON TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tube Surface Mount

BUB323Z Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 500 @ 5A 4.6V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.7V @ 250mA, 10A.Single BJT transistor is recommended to keep the continuous collector voltage at 10A in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 10A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 2MHz.Single BJT transistor is possible to have a collector current as low as 10A volts at Single BJT transistors maximum.

BUB323Z Features


the DC current gain for this device is 500 @ 5A 4.6V
the vce saturation(Max) is 1.7V @ 250mA, 10A
the emitter base voltage is kept at 6V
the current rating of this device is 10A
a transition frequency of 2MHz


BUB323Z Applications


There are a lot of ON Semiconductor
BUB323Z applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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