BSZ130N03MSGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

11.5m Ω @ 20A, 10V

Mounting Type :

Surface Mount

Additional Feature :

AVALANCHE RATED

Pbfree Code :

No

DS Breakdown Voltage-Min :

30V

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Published :

2000

Drain to Source Voltage (Vdss) :

30V

Package / Case :

8-PowerTDFN

Avalanche Energy Rating (Eas) :

9 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

9A

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

OptiMOS™

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 15V

Number of Elements :

1

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

9A Ta 35A Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pulsed Drain Current-Max (IDM) :

140A

FET Type :

N-Channel

Reach Compliance Code :

not_compliant

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

18 Weeks

Terminal Form :

NO LEAD

Power Dissipation-Max :

2.1W Ta 25W Tc

Number of Terminations :

5

Transistor Element Material :

SILICON

ECCN Code :

EAR99

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.015Ohm

Terminal Finish :

Tin (Sn)

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

2V @ 250μA

JESD-30 Code :

S-PDSO-N5

Surface Mount :

yes

Pin Count :

8

Transistor Application :

SWITCHING