BSZ130N03MSGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Avalanche Energy Rating (Eas) :

9 mJ

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

11.5m Ω @ 20A, 10V

Series :

OptiMOS™

DS Breakdown Voltage-Min :

30V

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

30V

Qualification Status :

Not Qualified

Number of Terminations :

5

Drain Current-Max (Abs) (ID) :

9A

Pbfree Code :

No

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

S-PDSO-N5

Reach Compliance Code :

not_compliant

Vgs(th) (Max) @ Id :

2V @ 250μA

Terminal Form :

NO LEAD

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

8-PowerTDFN

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 15V

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Published :

2000

JESD-609 Code :

e3

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Factory Lead Time :

18 Weeks

Pulsed Drain Current-Max (IDM) :

140A

Pin Count :

8

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

9A Ta 35A Tc

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

AVALANCHE RATED

Power Dissipation-Max :

2.1W Ta 25W Tc

Drain-source On Resistance-Max :

0.015Ohm