BSZ100N06NSATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

2ns

Input Capacitance :

1.075nF

Factory Lead Time :

18 Weeks

Power Dissipation-Max :

2.1W Ta 36W Tc

Max Dual Supply Voltage :

60V

Mount :

Surface Mount

Mounting Type :

Surface Mount

Published :

2012

Package / Case :

8-PowerTDFN

Supplier Device Package :

PG-TSDSON-8-FL

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

10mOhm @ 20A, 10V

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Halogen Free :

Halogen Free

Series :

OptiMOS™

Drain to Source Resistance :

8.5mOhm

Min Operating Temperature :

-55°C

Current - Continuous Drain (Id) @ 25°C :

40A Tc

RoHS Status :

ROHS3 Compliant

Lead Free :

Contains Lead

Max Operating Temperature :

150°C

Continuous Drain Current (ID) :

40A

Contact Plating :

Tin

Drain to Source Voltage (Vdss) :

60V

Vgs(th) (Max) @ Id :

3.3V @ 14μA

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1075pF @ 30V

Rds On Max :

10 MΩ

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V