BSZ130N03MSG

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Mfr.Part #
BSZ130N03MSG
Manufacturer
Infineon Technologies
Package / Case
Datasheet
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Description
BSZ130N03 - 12V-300V N-CHANNEL P
Stock
15,698
In Stock :
15,698

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Polarity/Channel Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Configuration :
SINGLE WITH BUILT-IN DIODE
Surface Mount :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-30 Code :
S-PDSO-N5
Terminal Finish :
Tin (Sn)
Terminal Position :
Dual
FET Technology :
METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min :
30V
Drain-source On Resistance-Max :
0.015Ohm
Additional Feature :
AVALANCHE RATED
ECCN Code :
EAR99
Number of Terminals :
5
Number of Elements :
1
RoHS Status :
RoHS Compliant
Case Connection :
DRAIN
Transistor Application :
SWITCHING
Pbfree Code :
icon-pbfree no
JESD-609 Code :
e3
Drain Current-Max (Abs) (ID) :
9A
Operating Temperature (Max) :
175°C
Pin Count :
8
Avalanche Energy Rating (Eas) :
9 mJ
Pulsed Drain Current-Max (IDM) :
140A
Terminal Form :
NO LEAD
Reach Compliance Code :
not_compliant
Operating Mode :
ENHANCEMENT MODE
Qualification Status :
Not Qualified
Transistor Element Material :
SILICON
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies BSZ130N03MSG from Chip IC,where excellence meets affordability. This product stands out with its BSZ130N03MSG pinout, BSZ130N03MSG datasheet PDF, BSZ130N03MSG amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies BSZ130N03MSG ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BSZ130N03MSG




BSZ130N03MS G Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 9 mJ.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 9A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 140A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 30V in order to maintain normal operation.

BSZ130N03MS G Features


the avalanche energy rating (Eas) is 9 mJ
based on its rated peak drain current 140A.


BSZ130N03MS G Applications


There are a lot of Infineon Technologies AG
BSZ130N03MS G applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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