BSZ100N03MSGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Number of Pins :

8

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 15V

JESD-609 Code :

e3

Pbfree Code :

No

Factory Lead Time :

18 Weeks

Pin Count :

8

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Lead Free :

Contains Lead

Power Dissipation :

2.1W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

2.1W Ta 30W Tc

Package / Case :

8-PowerTDFN

Terminal Form :

NO LEAD

Mount :

Surface Mount

Halogen Free :

Halogen Free

Number of Terminations :

5

Current - Continuous Drain (Id) @ 25°C :

10A Ta 40A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

16V

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

not_compliant

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

OptiMOS™

FET Type :

N-Channel

Case Connection :

DRAIN

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Rise Time :

2.8ns

Rds On (Max) @ Id, Vgs :

9.1m Ω @ 20A, 10V

JESD-30 Code :

S-PDSO-N5

ECCN Code :

EAR99

Threshold Voltage :

2V

Max Dual Supply Voltage :

30V

Continuous Drain Current (ID) :

40A

Published :

2005

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin