BSZ12DN20NS3G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Subcategory :

MOSFETs

Configuration :

Single

Maximum Operating Temperature :

+ 150 C

Rise Time :

4 ns

Power Dissipation-Max (Ta=25°C) :

50W Tc

Minimum Operating Temperature :

- 55 C

Product Category :

MOSFET

Package / Case :

PG-TSDSON-8

RoHS Status :

RoHS Compliant

Product Type :

MOSFET

FET Type :

N Channel

Brand :

Infineon Technologies

Length :

3.3 mm

Manufacturer :

Infineon

Packaging :

Tape and Reel (TR)

Width :

3.3 mm

Technology :

Si

Transistor Type :

1 N-Channel

Height :

1.1 mm

Drain to Source Voltage (Vdss) :

200V

Transistor Polarity :

N-Channel

Mounting Style :

SMD/SMT

Vgs(th) (Max) @ Id :

4V @ 25uA

RoHS :

Details

Rds On (Max) @ Id, Vgs :

125mΩ @ 5.7A,10V

Continuous Drain Current (Id) @ 25°C :

11.3A Tc

Number of Channels :

1 Channel

Channel Mode :

Enhancement