BSV52LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Saturation Voltage :

400mV

Pbfree Code :

yes

Frequency :

400MHz

Contact Plating :

Tin

Power - Max :

225mW

Max Collector Current :

100mA

Operating Temperature :

-55°C~150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 10mA 1V

Number of Pins :

3

Width :

1.4mm

Package / Case :

TO-236-3, SC-59, SOT-23-3

Collector Base Voltage (VCBO) :

20V

ECCN Code :

EAR99

JESD-609 Code :

e3

Current Rating :

200mA

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Factory Lead Time :

4 Weeks

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

12V

Voltage - Rated DC :

12V

Base Part Number :

BSV52

Surface Mount :

yes

Element Configuration :

Single

Pin Count :

3

Polarity/Channel Type :

NPN

Published :

2006

Transistor Type :

NPN

Gain Bandwidth Product :

400MHz

Time@Peak Reflow Temperature-Max (s) :

40

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

Collector Emitter Breakdown Voltage :

12V

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

1.2V

Transition Frequency :

400MHz

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

3.04mm

Height :

1.01mm

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

300mW

Max Breakdown Voltage :

12V

hFE Min :

25

Max Power Dissipation :

225mW

Number of Elements :

1

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

100nA ICBO

Terminal Position :

Dual