BSV52
- Mfr.Part #
- BSV52
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 12V 0.2A SOT23-3
- Stock
- 26,708
- In Stock :
- 26,708
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Max Power Dissipation :
- 225mW
- Contact Plating :
- Tin
- Terminal Form :
- Gull wing
- Published :
- 2000
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- 12V
- Terminal Position :
- Dual
- Polarity/Channel Type :
- NPN
- Width :
- 1.3mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Max Collector Current :
- 200mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 12V
- ECCN Code :
- EAR99
- Frequency :
- 400MHz
- Base Part Number :
- BSV52
- Height :
- 930μm
- Pbfree Code :
- yes
- hFE Min :
- 40
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 400mV
- Collector Base Voltage (VCBO) :
- 20V
- Current Rating :
- 200mA
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 10mA 1V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Factory Lead Time :
- 39 Weeks
- Emitter Base Voltage (VEBO) :
- 5V
- Gain Bandwidth Product :
- 400MHz
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 12V
- Power Dissipation :
- 225mW
- Collector Emitter Breakdown Voltage :
- 12V
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Transition Frequency :
- 400MHz
- Transistor Type :
- NPN
- Length :
- 2.92mm
- Weight :
- 30mg
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- BSV52

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BSV52 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 10mA 1V.The collector emitter saturation voltage is 400mV, which allows for maximum design flexibility.When VCE saturation is 400mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 200mA.In the part, the transition frequency is 400MHz.This device can take an input voltage of 12V volts before it breaks down.A maximum collector current of 200mA volts can be achieved.
BSV52 Features
the DC current gain for this device is 40 @ 10mA 1V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA
a transition frequency of 400MHz
BSV52 Applications
There are a lot of ON Semiconductor
BSV52 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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