BSV52LT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Max Power Dissipation :

225mW

Polarity/Channel Type :

NPN

Pin Count :

3

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 10mA 1V

Max Breakdown Voltage :

12V

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

1.2V

Gain Bandwidth Product :

400MHz

Current Rating :

200mA

Power Dissipation :

300mW

Base Part Number :

BSV52

Voltage - Rated DC :

12V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Collector Emitter Breakdown Voltage :

12V

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

Height :

1.01mm

Number of Pins :

3

Max Collector Current :

100mA

Element Configuration :

Single

Frequency :

400MHz

Lead Free :

Lead Free

Number of Terminations :

3

Collector Emitter Voltage (VCEO) :

12V

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Collector Base Voltage (VCBO) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Factory Lead Time :

4 Weeks

Width :

1.4mm

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

400mV

Length :

3.04mm

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Published :

2006

Transition Frequency :

400MHz

Contact Plating :

Tin

JESD-609 Code :

e3

Current - Collector Cutoff (Max) :

100nA ICBO

Surface Mount :

yes

Transistor Type :

NPN

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

40

hFE Min :

25

Power - Max :

225mW