BSV52,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Voltage - Collector Emitter Breakdown (Max) :

12V

ECCN Code :

EAR99

Published :

2009

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Qualification Status :

Not Qualified

Current - Collector (Ic) (Max) :

100mA

Collector-Base Capacitance-Max :

4pF

Turn Off Time-Max (toff) :

20ns

Transition Frequency :

500MHz

HTS Code :

8541.21.00.75

Number of Terminations :

3

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

Number of Elements :

1

JESD-609 Code :

e3

Terminal Form :

Gull wing

Operating Temperature :

150°C TJ

Polarity/Channel Type :

NPN

VCEsat-Max :

0.4 V

Current - Collector Cutoff (Max) :

400nA ICBO

Mounting Type :

Surface Mount

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Power - Max :

250mW

Package / Case :

TO-236-3, SC-59, SOT-23-3

Time@Peak Reflow Temperature-Max (s) :

40

Base Part Number :

BSV52

Transistor Type :

NPN

Terminal Position :

Dual

Turn On Time-Max (ton) :

10ns

Number of Pins :

3

Configuration :

Single

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

4 Weeks

Series :

Automotive, AEC-Q101

Frequency - Transition :

500MHz

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 10mA 1V